Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications

O. Akpa, S. Shaik, T. Thompson, T. Isaacs-Smith, P. Anderson, Supapan Seraphin, K. Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Films of ZnTe, ZnSe, and ZnO were deposited on (100) Si by RF magnetron sputtering from stoichiometric ZnTe, ZnSe, and ZnO targets for the purpose of fabricating a ZnTe/ZnSe heterojunction. Rutherford back scattering (RBS) analysis yielded a composition of Zn1.0Te1.0 for ZnTe, Zn1.1Se1.2 for ZnSe, and Zn1.0O0.8 for ZnO which indicates that near-stoichiometric films were obtained. Transmission electron microscopy (TEM) of cross-sectional samples established that the films were polycrystalline in nature. Heterostructures were grown on ZnO coated low resistivity n-type Si wafer. The heterojunctions consisted of a ∼65 nm layer of ZnSe, to serve as an absorber layer and ∼40 nm of ZnTe as a window layer. The heterojunction wafer was diced into 1 cm2 samples. A Pt back contact was deposited on the Si. The top surface of the junction was patterned with a contact leaving two, 0.25 cm × 0.65 cm ZnTe windows exposed. Both the top and bottom contacts were annealed at 350° C under N2 atmosphere for 5 min. Under 120 W halogen lamp illumination the junction showed a photovoltaic response. Between the top Al and back Pt, the device produced an approximate open-circuit voltage (VOC) of 600 mV as measured with a high impendence voltmeter.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1897-1901
Number of pages5
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Heterojunctions
Voltmeters
Open circuit voltage
Volatile organic compounds
Electric lamps
Magnetron sputtering
Lighting
Scattering
Transmission electron microscopy
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Akpa, O., Shaik, S., Thompson, T., Isaacs-Smith, T., Anderson, P., Seraphin, S., & Das, K. (2010). Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1897-1901). [5616303] https://doi.org/10.1109/PVSC.2010.5616303

Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications. / Akpa, O.; Shaik, S.; Thompson, T.; Isaacs-Smith, T.; Anderson, P.; Seraphin, Supapan; Das, K.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1897-1901 5616303.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akpa, O, Shaik, S, Thompson, T, Isaacs-Smith, T, Anderson, P, Seraphin, S & Das, K 2010, Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5616303, pp. 1897-1901, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616303
Akpa O, Shaik S, Thompson T, Isaacs-Smith T, Anderson P, Seraphin S et al. Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 1897-1901. 5616303 https://doi.org/10.1109/PVSC.2010.5616303
Akpa, O. ; Shaik, S. ; Thompson, T. ; Isaacs-Smith, T. ; Anderson, P. ; Seraphin, Supapan ; Das, K. / Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 1897-1901
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