Films of ZnTe, ZnSe, and ZnO were deposited on (100) Si by RF magnetron sputtering from stoichiometric ZnTe, ZnSe, and ZnO targets for the purpose of fabricating a ZnTe/ZnSe heterojunction. Rutherford back scattering (RBS) analysis yielded a composition of Zn1.0Te1.0 for ZnTe, Zn1.1Se1.2 for ZnSe, and Zn1.0O0.8 for ZnO which indicates that near-stoichiometric films were obtained. Transmission electron microscopy (TEM) of cross-sectional samples established that the films were polycrystalline in nature. Heterostructures were grown on ZnO coated low resistivity n-type Si wafer. The heterojunctions consisted of a ∼65 nm layer of ZnSe, to serve as an absorber layer and ∼40 nm of ZnTe as a window layer. The heterojunction wafer was diced into 1 cm2 samples. A Pt back contact was deposited on the Si. The top surface of the junction was patterned with a contact leaving two, 0.25 cm × 0.65 cm ZnTe windows exposed. Both the top and bottom contacts were annealed at 350° C under N2 atmosphere for 5 min. Under 120 W halogen lamp illumination the junction showed a photovoltaic response. Between the top Al and back Pt, the device produced an approximate open-circuit voltage (VOC) of 600 mV as measured with a high impendence voltmeter.