Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si

Okechukwu N. Akpa, Shaik Shoieb, Trenton R. Thompson, Tamara F. Isaacs-Smith, Philip Anderson, Supapan Seraphin, Kalyan K. Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of CuInSe2(CIS) and CuGaSe2(CGS) were deposited on (100) Si substrates by RF magnetron sputtering using stoichiometric targets, at various substrate temperatures. Prior to film deposition, the Si substrates were cleaned using the RCA cleaning procedure and treated in a buffered oxide etch (BOE) solution. Deposited films were characterized using Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) of cross-sectional samples and Hall measurements. Rutherford backscattering analysis indicated that the CIS films had a composition of Cu0.8In1.1Se1.9, whereas CGS films were Cu-poor and Ga-rich with a composition of Cu0.3Ga1.5Se 1.5. Clean Cu-chalcopyrite/Si interfaces were obtained using BOE treated Si substrates. Transmission electron micrographs of cross-sectional samples indicated a polycrystalline film structure and that the native oxide on the Si substrate was eliminated. Energy dispersive X-ray spectroscopy (EDS) conducted in the TEM showed that contamination levels in the films were low. The Hall-mobility experiments performed the CIS film indicated that the material was of p-type conductivity with a carrier concentration of 9.6 × 10 20/cm3 and a Hall mobility of 390 cm2V -1s-1.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages241-244
Number of pages4
Volume1210
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2009Dec 3 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0912/3/09

Fingerprint

Sputter deposition
composite materials
Composite materials
Oxides
Substrates
Hall mobility
Rutherford backscattering spectroscopy
oxides
backscattering
Transmission electron microscopy
transmission electron microscopy
Chemical analysis
Magnetron sputtering
cleaning
spectroscopy
Carrier concentration
Energy dispersive spectroscopy
Cleaning
magnetron sputtering
contamination

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Akpa, O. N., Shoieb, S., Thompson, T. R., Isaacs-Smith, T. F., Anderson, P., Seraphin, S., & Das, K. K. (2010). Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si. In Materials Research Society Symposium Proceedings (Vol. 1210, pp. 241-244)

Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si. / Akpa, Okechukwu N.; Shoieb, Shaik; Thompson, Trenton R.; Isaacs-Smith, Tamara F.; Anderson, Philip; Seraphin, Supapan; Das, Kalyan K.

Materials Research Society Symposium Proceedings. Vol. 1210 2010. p. 241-244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akpa, ON, Shoieb, S, Thompson, TR, Isaacs-Smith, TF, Anderson, P, Seraphin, S & Das, KK 2010, Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si. in Materials Research Society Symposium Proceedings. vol. 1210, pp. 241-244, 2009 MRS Fall Meeting, Boston, MA, United States, 11/29/09.
Akpa ON, Shoieb S, Thompson TR, Isaacs-Smith TF, Anderson P, Seraphin S et al. Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si. In Materials Research Society Symposium Proceedings. Vol. 1210. 2010. p. 241-244
Akpa, Okechukwu N. ; Shoieb, Shaik ; Thompson, Trenton R. ; Isaacs-Smith, Tamara F. ; Anderson, Philip ; Seraphin, Supapan ; Das, Kalyan K. / Sputter deposition of CuInSe2 and CuGaSe2 from composite targets on (100) Si. Materials Research Society Symposium Proceedings. Vol. 1210 2010. pp. 241-244
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AU - Anderson, Philip

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AB - Thin films of CuInSe2(CIS) and CuGaSe2(CGS) were deposited on (100) Si substrates by RF magnetron sputtering using stoichiometric targets, at various substrate temperatures. Prior to film deposition, the Si substrates were cleaned using the RCA cleaning procedure and treated in a buffered oxide etch (BOE) solution. Deposited films were characterized using Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) of cross-sectional samples and Hall measurements. Rutherford backscattering analysis indicated that the CIS films had a composition of Cu0.8In1.1Se1.9, whereas CGS films were Cu-poor and Ga-rich with a composition of Cu0.3Ga1.5Se 1.5. Clean Cu-chalcopyrite/Si interfaces were obtained using BOE treated Si substrates. Transmission electron micrographs of cross-sectional samples indicated a polycrystalline film structure and that the native oxide on the Si substrate was eliminated. Energy dispersive X-ray spectroscopy (EDS) conducted in the TEM showed that contamination levels in the films were low. The Hall-mobility experiments performed the CIS film indicated that the material was of p-type conductivity with a carrier concentration of 9.6 × 10 20/cm3 and a Hall mobility of 390 cm2V -1s-1.

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