Stability of SiGe(100) surfaces after ammonium sulfide passivation

S. L. Heslop, L. Peckler, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Si1-xGex(x=0.25) substrates were treated with aqueous ammonium sulfide with the goal of passivating the surface both electrically and chemically. X-ray photoelectron spectroscopy (XPS) showed that no sulfur was deposited. Instead the surface was oxidized in solution, and the higher the ammonium sulfide concentration, the more oxide that formed. Spectroscopic ellipsometry showed that samples treated with dilute ammonium sulfide oxidized much more rapidly when exposed to air than those treated with a higher concentration. Addition of halogen acids to the sulfur solution deposited sulfides, but oxides were also present. The density of interface defects (Dit) was extracted from capacitance-voltage measurements of metal-insulator-semiconductor capacitors for the clean acid last surface and after either ammonium sulfide alone or ammonium sulfide plus acid. Samples treated in ammonium sulfide plus acid showed the smallest increase in interface defects compared to the other two surfaces.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages147-153
Number of pages7
Volume80
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
Event15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 2 2017Oct 3 2017

Other

Other15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/2/1710/3/17

ASJC Scopus subject areas

  • Engineering(all)

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