Stability of SiGe(100) surfaces after ammonium sulfide passivation

S. L. Heslop, L. Peckler, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Si1-xGex(x=0.25) substrates were treated with aqueous ammonium sulfide with the goal of passivating the surface both electrically and chemically. X-ray photoelectron spectroscopy (XPS) showed that no sulfur was deposited. Instead the surface was oxidized in solution, and the higher the ammonium sulfide concentration, the more oxide that formed. Spectroscopic ellipsometry showed that samples treated with dilute ammonium sulfide oxidized much more rapidly when exposed to air than those treated with a higher concentration. Addition of halogen acids to the sulfur solution deposited sulfides, but oxides were also present. The density of interface defects (Dit) was extracted from capacitance-voltage measurements of metal-insulator-semiconductor capacitors for the clean acid last surface and after either ammonium sulfide alone or ammonium sulfide plus acid. Samples treated in ammonium sulfide plus acid showed the smallest increase in interface defects compared to the other two surfaces.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages147-153
Number of pages7
Volume80
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
Event15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 2 2017Oct 3 2017

Other

Other15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/2/1710/3/17

Fingerprint

Passivation
Acids
Sulfur
Defects
Oxides
Capacitance measurement
Spectroscopic ellipsometry
Voltage measurement
Sulfides
Capacitors
X ray photoelectron spectroscopy
Semiconductor materials
Substrates
Air
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Heslop, S. L., Peckler, L., & Muscat, A. J. (2017). Stability of SiGe(100) surfaces after ammonium sulfide passivation. In ECS Transactions (2 ed., Vol. 80, pp. 147-153). Electrochemical Society Inc.. https://doi.org/10.1149/08002.0147ecst

Stability of SiGe(100) surfaces after ammonium sulfide passivation. / Heslop, S. L.; Peckler, L.; Muscat, Anthony J.

ECS Transactions. Vol. 80 2. ed. Electrochemical Society Inc., 2017. p. 147-153.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heslop, SL, Peckler, L & Muscat, AJ 2017, Stability of SiGe(100) surfaces after ammonium sulfide passivation. in ECS Transactions. 2 edn, vol. 80, Electrochemical Society Inc., pp. 147-153, 15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting, National Harbor, United States, 10/2/17. https://doi.org/10.1149/08002.0147ecst
Heslop SL, Peckler L, Muscat AJ. Stability of SiGe(100) surfaces after ammonium sulfide passivation. In ECS Transactions. 2 ed. Vol. 80. Electrochemical Society Inc. 2017. p. 147-153 https://doi.org/10.1149/08002.0147ecst
Heslop, S. L. ; Peckler, L. ; Muscat, Anthony J. / Stability of SiGe(100) surfaces after ammonium sulfide passivation. ECS Transactions. Vol. 80 2. ed. Electrochemical Society Inc., 2017. pp. 147-153
@inproceedings{d74917f2a34645929c62fde9ea826130,
title = "Stability of SiGe(100) surfaces after ammonium sulfide passivation",
abstract = "Si1-xGex(x=0.25) substrates were treated with aqueous ammonium sulfide with the goal of passivating the surface both electrically and chemically. X-ray photoelectron spectroscopy (XPS) showed that no sulfur was deposited. Instead the surface was oxidized in solution, and the higher the ammonium sulfide concentration, the more oxide that formed. Spectroscopic ellipsometry showed that samples treated with dilute ammonium sulfide oxidized much more rapidly when exposed to air than those treated with a higher concentration. Addition of halogen acids to the sulfur solution deposited sulfides, but oxides were also present. The density of interface defects (Dit) was extracted from capacitance-voltage measurements of metal-insulator-semiconductor capacitors for the clean acid last surface and after either ammonium sulfide alone or ammonium sulfide plus acid. Samples treated in ammonium sulfide plus acid showed the smallest increase in interface defects compared to the other two surfaces.",
author = "Heslop, {S. L.} and L. Peckler and Muscat, {Anthony J}",
year = "2017",
month = "1",
day = "1",
doi = "10.1149/08002.0147ecst",
language = "English (US)",
volume = "80",
pages = "147--153",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "2",

}

TY - GEN

T1 - Stability of SiGe(100) surfaces after ammonium sulfide passivation

AU - Heslop, S. L.

AU - Peckler, L.

AU - Muscat, Anthony J

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Si1-xGex(x=0.25) substrates were treated with aqueous ammonium sulfide with the goal of passivating the surface both electrically and chemically. X-ray photoelectron spectroscopy (XPS) showed that no sulfur was deposited. Instead the surface was oxidized in solution, and the higher the ammonium sulfide concentration, the more oxide that formed. Spectroscopic ellipsometry showed that samples treated with dilute ammonium sulfide oxidized much more rapidly when exposed to air than those treated with a higher concentration. Addition of halogen acids to the sulfur solution deposited sulfides, but oxides were also present. The density of interface defects (Dit) was extracted from capacitance-voltage measurements of metal-insulator-semiconductor capacitors for the clean acid last surface and after either ammonium sulfide alone or ammonium sulfide plus acid. Samples treated in ammonium sulfide plus acid showed the smallest increase in interface defects compared to the other two surfaces.

AB - Si1-xGex(x=0.25) substrates were treated with aqueous ammonium sulfide with the goal of passivating the surface both electrically and chemically. X-ray photoelectron spectroscopy (XPS) showed that no sulfur was deposited. Instead the surface was oxidized in solution, and the higher the ammonium sulfide concentration, the more oxide that formed. Spectroscopic ellipsometry showed that samples treated with dilute ammonium sulfide oxidized much more rapidly when exposed to air than those treated with a higher concentration. Addition of halogen acids to the sulfur solution deposited sulfides, but oxides were also present. The density of interface defects (Dit) was extracted from capacitance-voltage measurements of metal-insulator-semiconductor capacitors for the clean acid last surface and after either ammonium sulfide alone or ammonium sulfide plus acid. Samples treated in ammonium sulfide plus acid showed the smallest increase in interface defects compared to the other two surfaces.

UR - http://www.scopus.com/inward/record.url?scp=85050016259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050016259&partnerID=8YFLogxK

U2 - 10.1149/08002.0147ecst

DO - 10.1149/08002.0147ecst

M3 - Conference contribution

VL - 80

SP - 147

EP - 153

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -