Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Y. H. Lee, M. Warren, G. R. Olbright, H. M. Gibbs, Nasser N Peyghambarian, T. Venkatesan, J. S. Smith, A. Yariv

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.

Original languageEnglish (US)
Pages (from-to)754-756
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number12
DOIs
StatePublished - 1986

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streak cameras
aluminum gallium arsenides
recovery
pixels
mirrors
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array. / Lee, Y. H.; Warren, M.; Olbright, G. R.; Gibbs, H. M.; Peyghambarian, Nasser N; Venkatesan, T.; Smith, J. S.; Yariv, A.

In: Applied Physics Letters, Vol. 48, No. 12, 1986, p. 754-756.

Research output: Contribution to journalArticle

Lee, YH, Warren, M, Olbright, GR, Gibbs, HM, Peyghambarian, NN, Venkatesan, T, Smith, JS & Yariv, A 1986, 'Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array', Applied Physics Letters, vol. 48, no. 12, pp. 754-756. https://doi.org/10.1063/1.96710
Lee, Y. H. ; Warren, M. ; Olbright, G. R. ; Gibbs, H. M. ; Peyghambarian, Nasser N ; Venkatesan, T. ; Smith, J. S. ; Yariv, A. / Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array. In: Applied Physics Letters. 1986 ; Vol. 48, No. 12. pp. 754-756.
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