Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Y. H. Lee, M. Warren, G. R. Olbright, H. M. Gibbs, N. Peyghambarian, T. Venkatesan, J. S. Smith, A. Yariv

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.

Original languageEnglish (US)
Pages (from-to)754-756
Number of pages3
JournalApplied Physics Letters Applied Physics Letters
Volume48
Issue number12
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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