Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers

G. Nunzi Conti, P. Ayras, C. Cavaliere, B. C. Hwang, T. Luo, J. T. Rantala, S. Jiang, S. Honkanen, N. Peyghambarian

Research output: Contribution to journalConference article

Abstract

A new strip-loaded structure for ion-exchanged waveguide amplifiers in Er3+-doped glass is suggested. The fabrication of these waveguides lacks steps such as mask deposition and burial process that can be critical for some glasses. A simple numerical modeling shows that similar, or even higher, gain values as in ion-exchanged buried waveguides can be achieved. Preliminary experimental data for the fabrication of the strip-loaded structure are also reported.

Original languageEnglish (US)
Pages (from-to)122-128
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3622
StatePublished - 1999
EventProceedings of the 1999 Rare-Earth-Doped Materials and Devices III - San Jose, CA, USA
Duration: Jan 27 1999Jan 28 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Conti, G. N., Ayras, P., Cavaliere, C., Hwang, B. C., Luo, T., Rantala, J. T., Jiang, S., Honkanen, S., & Peyghambarian, N. (1999). Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers. Proceedings of SPIE - The International Society for Optical Engineering, 3622, 122-128.