Strong-field modulation of semiconductor luminescence spectra

M. Lindberg, Sunghyuck An, S. W. Koch, M. Sargent

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electron-hole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the total carrier density to adiabatically follow the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal an asymmetric peak generated by pump scattering from carrier-density pulsations induced by the interference between the pump and a vacuum mode. Similar to the two-level fluorescence and probe absorption, the semiconductor-probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.

Original languageEnglish (US)
Pages (from-to)4415-4425
Number of pages11
JournalPhysical Review A
Volume40
Issue number8
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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