Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, Stephan W Koch, G. Blume, G. Weiser, W. Rühle, S. R. Johnson, J. B. Wang, Y. H. Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
Publication statusPublished - 2007
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 6 2007

Other

OtherConference on Lasers and Electro-Optics, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period5/6/075/6/07

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., ... Zhang, Y. H. (2007). Strong lateral confinement in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Optics InfoBase Conference Papers Optical Society of America.