Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

L. Karvonen, A. Saynatjoki, V. Dhaka, T. Haggren, S. Honkanen, S. Mehravar, R. Norwood, N. Peyghambarian, H. Lipsanen, K. Kieu

Research output: Contribution to conferencePaper

Abstract

Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).

Original languageEnglish (US)
DOIs
StatePublished - Jan 1 2013
Event2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
Duration: May 12 2013May 16 2013

Other

Other2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
CountryGermany
CityMunich
Period5/12/135/16/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Karvonen, L., Saynatjoki, A., Dhaka, V., Haggren, T., Honkanen, S., Mehravar, S., Norwood, R., Peyghambarian, N., Lipsanen, H., & Kieu, K. (2013). Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate. Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany. https://doi.org/10.1109/CLEOE-IQEC.2013.6800947