Structural dependence of carrier capture time in semiconductor quantum-well lasers

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.

Original languageEnglish (US)
Pages (from-to)369-371
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number3
DOIs
StatePublished - Jul 19 2004

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quantum well lasers
semiconductor lasers
quantum wells
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structural dependence of carrier capture time in semiconductor quantum-well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

In: Applied Physics Letters, Vol. 85, No. 3, 19.07.2004, p. 369-371.

Research output: Contribution to journalArticle

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