Structural dependence of carrier capture time in semiconductor quantum-well lasers

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.

Original languageEnglish (US)
Pages (from-to)369-371
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number3
DOIs
StatePublished - Jul 19 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Structural dependence of carrier capture time in semiconductor quantum-well lasers'. Together they form a unique fingerprint.

  • Cite this