Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopicmodels it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 2007
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

Fingerprint

Optical gain
Quantum well lasers
Semiconductor quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Conference on Lasers and Electro-Optics, 2007, CLEO 2007. 2007. 4453595.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2007, Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4453595, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/CLEO.2007.4453595
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