Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publicationPhotonic Applications Systems Technologies Conference, PhAST 2007
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
StatePublished - Jan 1 2007
EventPhotonic Applications Systems Technologies Conference, PhAST 2007 - Baltimore, MD, United States
Duration: May 8 2007May 8 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherPhotonic Applications Systems Technologies Conference, PhAST 2007
CountryUnited States
CityBaltimore, MD
Period5/8/075/8/07

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ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2007). Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. In Photonic Applications Systems Technologies Conference, PhAST 2007 (Optics InfoBase Conference Papers). Optical Society of America.