Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
StatePublished - 2007
EventPhotonic Applications Systems Technologies Conference, PhAST 2007 - Baltimore, MD, United States
Duration: May 8 2007May 8 2007

Other

OtherPhotonic Applications Systems Technologies Conference, PhAST 2007
CountryUnited States
CityBaltimore, MD
Period5/8/075/8/07

Fingerprint

Optical gain
Quantum well lasers
quantum well lasers
threshold currents
Semiconductor quantum wells
quantum wells

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Optics InfoBase Conference Papers. Optical Society of America, 2007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2007, Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. in Optics InfoBase Conference Papers. Optical Society of America, Photonic Applications Systems Technologies Conference, PhAST 2007, Baltimore, MD, United States, 5/8/07.
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