Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
StatePublished - Jan 1 2007
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 6 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period5/6/075/6/07

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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