Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publication2007 Quantum Electronics and Laser Science Conference, QELS
DOIs
StatePublished - Dec 1 2007
Event2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

Other2007 Quantum Electronics and Laser Science Conference, QELS
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2007). Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. In 2007 Quantum Electronics and Laser Science Conference, QELS [4431372] (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431372