Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.

Original languageEnglish (US)
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
DOIs
StatePublished - 2007
Event2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Other

Other2007 Quantum Electronics and Laser Science Conference, QELS
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

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quantum well lasers
threshold currents
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. 2007. 4431372.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2007, Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series., 4431372, 2007 Quantum Electronics and Laser Science Conference, QELS, Baltimore, MD, United States, 5/6/07. https://doi.org/10.1109/QELS.2007.4431372
Hader J, Moloney JV, Koch SW. Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. 2007. 4431372 https://doi.org/10.1109/QELS.2007.4431372
Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Structural dependence of optical gain and carrier losses in InGaN quantum well lasers. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. 2007.
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