Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy

Ara Philipossian, H. Lee, S. V. Babu, U. Patri, Y. Hong, L. Economikos, M. Goldstein, Y. Zhuang, L. Borucki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the factional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages515-522
Number of pages8
Volume2
Edition2
StatePublished - 2006
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

Fingerprint

Spectroscopy
Copper
Friction
Lubrication
Surface active agents
Stick-slip
Slurries
Polishing
Spectrum analysis
Sulfates
Energy dissipation
Kinematics
Wear of materials
Adsorption
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Philipossian, A., Lee, H., Babu, S. V., Patri, U., Hong, Y., Economikos, L., ... Borucki, L. (2006). Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy. In ECS Transactions (2 ed., Vol. 2, pp. 515-522)

Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy. / Philipossian, Ara; Lee, H.; Babu, S. V.; Patri, U.; Hong, Y.; Economikos, L.; Goldstein, M.; Zhuang, Y.; Borucki, L.

ECS Transactions. Vol. 2 2. ed. 2006. p. 515-522.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Philipossian, A, Lee, H, Babu, SV, Patri, U, Hong, Y, Economikos, L, Goldstein, M, Zhuang, Y & Borucki, L 2006, Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy. in ECS Transactions. 2 edn, vol. 2, pp. 515-522, 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 5/7/06.
Philipossian A, Lee H, Babu SV, Patri U, Hong Y, Economikos L et al. Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy. In ECS Transactions. 2 ed. Vol. 2. 2006. p. 515-522
Philipossian, Ara ; Lee, H. ; Babu, S. V. ; Patri, U. ; Hong, Y. ; Economikos, L. ; Goldstein, M. ; Zhuang, Y. ; Borucki, L. / Study of inhibition characteristics of slurry additives in copper CMP using force spectroscopy. ECS Transactions. Vol. 2 2. ed. 2006. pp. 515-522
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