Subpicosecond hole tunneling and application to 1.3 μm modulators

S. Ten, M. F. Krol, G. Khitrova, N. Peyghambarian

Research output: Contribution to journalConference article

Abstract

We report experimental and theoretical investigation of carrier tunneling and electroabsorption in (Ga,In)As/(Al,In)As asymmetric double quantum wells (ADQW). This heterostructure was proposed as a promising material for all-optical and electroabsorption modulators. We demonstrated ultrafast hole tunneling in our ADQW, which results in fast and complete recovery of narrow well excitonic absorption. Carrier tunneling kinetics was investigated as a function of carrier density, energy of excitation photon and temperature. We also report enhanced electroabsorption in selectively doped ADQW. Absorption changes of doped ADQW with applied electric field appeared to be larger than that of undoped. We show that electroabsorption modulator based on our ADQW has the potential for high contrast and fast recovery controlled by fast carrier tunneling.

Original languageEnglish (US)
Pages (from-to)1
Number of pages1
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 1995
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: Oct 30 1995Nov 2 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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