Restoration of NCS low-k dielectric in supercritical CO2 (scCO2) after etching and ashing plasma processing was studied using hexamethyldisilazane (HMDS) as silylating agent. Uniform restoration of the contact angle was demonstrated on 200 mm wafers. Shortening the time delay between etching/ashing and restoration improves the surface hydrophobicity. FTIR showed moisture removal and an increase of -CH3 groups. Ellipsometric porosimetry showed that the repaired film was partially sealed. TOFSIMS depth profiles of plasma damaged and repaired films indicate that the composition of both films was equivalent, suggesting that the scCO 2/HMDS restoration process was limited to the surface of plasma-damaged NCS. Surface restoration of the plasma damage film was confirmed by capacitance measured on Metal-Insulator-Metal (MIM) capacitors.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Dec 1 2005|
|Event||9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
ASJC Scopus subject areas