Superlattice physics of digitally grown epitaxial InAlGaAs layers

J. K. White, A. Joshi, M. Extavour, A. J. SpringThorpe, J. Hader, J. V. Moloney, S. W. Koch

Research output: Contribution to journalArticle

Abstract

The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

Original languageEnglish (US)
Pages (from-to)271-278
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4646
DOIs
StatePublished - Jan 1 2002

Keywords

  • Digital alloy
  • InAlGaAs
  • Molecular beam epitaxy
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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