Superlattice physics of digitally grown epitaxial InAlGaAs layers

J. K. White, A. Joshi, M. Extavour, A. J. SpringThorpe, Jorg Hader, Jerome V Moloney, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.H. Binder, P. Blood, M. Osinski, Y. Arakawa
Pages271-278
Number of pages8
Volume4646
DOIs
StatePublished - 2002
EventPhysics and Simulation of Optoelectronic Devices X - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Other

OtherPhysics and Simulation of Optoelectronic Devices X
CountryUnited States
CitySan Jose, CA
Period1/21/021/25/02

Fingerprint

Epitaxial layers
molecular beam epitaxy
Physics
photoluminescence
quaternary alloys
Molecular beam epitaxy
physics
Photoluminescence
flux (rate)
Fluxes
inhomogeneity
Chemical analysis
Monolayers

Keywords

  • Digital alloy
  • InAlGaAs
  • Molecular beam epitaxy
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

White, J. K., Joshi, A., Extavour, M., SpringThorpe, A. J., Hader, J., Moloney, J. V., & Koch, S. W. (2002). Superlattice physics of digitally grown epitaxial InAlGaAs layers. In R. H. Binder, P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4646, pp. 271-278) https://doi.org/10.1117/12.470525

Superlattice physics of digitally grown epitaxial InAlGaAs layers. / White, J. K.; Joshi, A.; Extavour, M.; SpringThorpe, A. J.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.H. Binder; P. Blood; M. Osinski; Y. Arakawa. Vol. 4646 2002. p. 271-278.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

White, JK, Joshi, A, Extavour, M, SpringThorpe, AJ, Hader, J, Moloney, JV & Koch, SW 2002, Superlattice physics of digitally grown epitaxial InAlGaAs layers. in RH Binder, P Blood, M Osinski & Y Arakawa (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4646, pp. 271-278, Physics and Simulation of Optoelectronic Devices X, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.470525
White JK, Joshi A, Extavour M, SpringThorpe AJ, Hader J, Moloney JV et al. Superlattice physics of digitally grown epitaxial InAlGaAs layers. In Binder RH, Blood P, Osinski M, Arakawa Y, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4646. 2002. p. 271-278 https://doi.org/10.1117/12.470525
White, J. K. ; Joshi, A. ; Extavour, M. ; SpringThorpe, A. J. ; Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Superlattice physics of digitally grown epitaxial InAlGaAs layers. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.H. Binder ; P. Blood ; M. Osinski ; Y. Arakawa. Vol. 4646 2002. pp. 271-278
@inproceedings{ff0056328bc54b21a95b3b38d807d14e,
title = "Superlattice physics of digitally grown epitaxial InAlGaAs layers",
abstract = "The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.",
keywords = "Digital alloy, InAlGaAs, Molecular beam epitaxy, Semiconductor lasers",
author = "White, {J. K.} and A. Joshi and M. Extavour and SpringThorpe, {A. J.} and Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2002",
doi = "10.1117/12.470525",
language = "English (US)",
volume = "4646",
pages = "271--278",
editor = "R.H. Binder and P. Blood and M. Osinski and Y. Arakawa",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Superlattice physics of digitally grown epitaxial InAlGaAs layers

AU - White, J. K.

AU - Joshi, A.

AU - Extavour, M.

AU - SpringThorpe, A. J.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2002

Y1 - 2002

N2 - The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

AB - The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

KW - Digital alloy

KW - InAlGaAs

KW - Molecular beam epitaxy

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0036031178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036031178&partnerID=8YFLogxK

U2 - 10.1117/12.470525

DO - 10.1117/12.470525

M3 - Conference contribution

AN - SCOPUS:0036031178

VL - 4646

SP - 271

EP - 278

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Binder, R.H.

A2 - Blood, P.

A2 - Osinski, M.

A2 - Arakawa, Y.

ER -