Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices

P. M W Skovgaard, J. G. McInerney, Jerome V Moloney, Robert A Indik, C. Z. Ning, A. Egan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Detailed theoretical analyses of monolithically integrated flared amplifier master oscillator power amplifiers (MFA-MOPAs) are presented. The field amplitudes and the carrier density are calculated using effective Block equations. The obtained features of the MFA-MOPAs are presented and discussed.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Editors Anon
PublisherIEEE
Pages244
Number of pages1
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA
Duration: May 3 1998May 8 1998

Other

OtherProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
CitySan Francisco, CA, USA
Period5/3/985/8/98

Fingerprint

Semiconductor devices
Power amplifiers
Carrier concentration

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Skovgaard, P. M. W., McInerney, J. G., Moloney, J. V., Indik, R. A., Ning, C. Z., & Egan, A. (1998). Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. In Anon (Ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest (pp. 244). IEEE.

Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. / Skovgaard, P. M W; McInerney, J. G.; Moloney, Jerome V; Indik, Robert A; Ning, C. Z.; Egan, A.

Conference on Lasers and Electro-Optics Europe - Technical Digest. ed. / Anon. IEEE, 1998. p. 244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Skovgaard, PMW, McInerney, JG, Moloney, JV, Indik, RA, Ning, CZ & Egan, A 1998, Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. in Anon (ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest. IEEE, pp. 244, Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, 5/3/98.
Skovgaard PMW, McInerney JG, Moloney JV, Indik RA, Ning CZ, Egan A. Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. In Anon, editor, Conference on Lasers and Electro-Optics Europe - Technical Digest. IEEE. 1998. p. 244
Skovgaard, P. M W ; McInerney, J. G. ; Moloney, Jerome V ; Indik, Robert A ; Ning, C. Z. ; Egan, A. / Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. Conference on Lasers and Electro-Optics Europe - Technical Digest. editor / Anon. IEEE, 1998. pp. 244
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