Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices

P. M.W. Skovgaard, J. G. McInerney, J. V. Moloney, R. A. Indik, C. Z. Ning, A. Egan

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Detailed theoretical analyses of monolithically integrated flared amplifier master oscillator power amplifiers (MFA-MOPAs) are presented. The field amplitudes and the carrier density are calculated using effective Block equations. The obtained features of the MFA-MOPAs are presented and discussed.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA
Duration: May 3 1998May 8 1998

Other

OtherProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
CitySan Francisco, CA, USA
Period5/3/985/8/98

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Skovgaard, P. M. W., McInerney, J. G., Moloney, J. V., Indik, R. A., Ning, C. Z., & Egan, A. (1998). Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. Paper presented at Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, .