Supression of carrier recombination in semiconductor lasers by phase-space filling

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

Original languageEnglish (US)
Article number201112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
StatePublished - Nov 14 2005

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spontaneous emission
semiconductor lasers
plasma density
breakdown

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Supression of carrier recombination in semiconductor lasers by phase-space filling. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

In: Applied Physics Letters, Vol. 87, No. 20, 201112, 14.11.2005, p. 1-3.

Research output: Contribution to journalArticle

@article{98b4396f50e34b7bb746682c09625331,
title = "Supression of carrier recombination in semiconductor lasers by phase-space filling",
abstract = "A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2005",
month = "11",
day = "14",
doi = "10.1063/1.2132524",
language = "English (US)",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Supression of carrier recombination in semiconductor lasers by phase-space filling

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2005/11/14

Y1 - 2005/11/14

N2 - A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

AB - A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

UR - http://www.scopus.com/inward/record.url?scp=27744562177&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744562177&partnerID=8YFLogxK

U2 - 10.1063/1.2132524

DO - 10.1063/1.2132524

M3 - Article

AN - SCOPUS:27744562177

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201112

ER -