Surface charge effects in silicon wafer cleaning using surfactant-containing solutions

Joong Suck Jeon, Srini Raghavan, John Lowell, Valerie Wenner

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJagdish P. Mathur, John Lowell, Ray T. Chen
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages13-19
Number of pages7
Volume2337
ISBN (Print)0819416703
StatePublished - 1994
EventOptical Characterization Techniques for High-Performance Microelectronic Device Manufacturing - Austin, TX, USA
Duration: Oct 20 1994Oct 20 1994

Other

OtherOptical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
CityAustin, TX, USA
Period10/20/9410/20/94

Fingerprint

Surface charge
Silicon wafers
cleaning
Cleaning
Surface active agents
surfactants
wafers
Adsorption
Silicon
silicon
Cationic surfactants
adsorption
photovoltages
conditioning
Water
water

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Jeon, J. S., Raghavan, S., Lowell, J., & Wenner, V. (1994). Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. In J. P. Mathur, J. Lowell, & R. T. Chen (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2337, pp. 13-19). Society of Photo-Optical Instrumentation Engineers.

Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. / Jeon, Joong Suck; Raghavan, Srini; Lowell, John; Wenner, Valerie.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Jagdish P. Mathur; John Lowell; Ray T. Chen. Vol. 2337 Society of Photo-Optical Instrumentation Engineers, 1994. p. 13-19.

Research output: Chapter in Book/Report/Conference proceedingChapter

Jeon, JS, Raghavan, S, Lowell, J & Wenner, V 1994, Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. in JP Mathur, J Lowell & RT Chen (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2337, Society of Photo-Optical Instrumentation Engineers, pp. 13-19, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, Austin, TX, USA, 10/20/94.
Jeon JS, Raghavan S, Lowell J, Wenner V. Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. In Mathur JP, Lowell J, Chen RT, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2337. Society of Photo-Optical Instrumentation Engineers. 1994. p. 13-19
Jeon, Joong Suck ; Raghavan, Srini ; Lowell, John ; Wenner, Valerie. / Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. Proceedings of SPIE - The International Society for Optical Engineering. editor / Jagdish P. Mathur ; John Lowell ; Ray T. Chen. Vol. 2337 Society of Photo-Optical Instrumentation Engineers, 1994. pp. 13-19
@inbook{ebbabec4e22f4817b9315e1540be33ed,
title = "Surface charge effects in silicon wafer cleaning using surfactant-containing solutions",
abstract = "The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.",
author = "Jeon, {Joong Suck} and Srini Raghavan and John Lowell and Valerie Wenner",
year = "1994",
language = "English (US)",
isbn = "0819416703",
volume = "2337",
pages = "13--19",
editor = "Mathur, {Jagdish P.} and John Lowell and Chen, {Ray T.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - CHAP

T1 - Surface charge effects in silicon wafer cleaning using surfactant-containing solutions

AU - Jeon, Joong Suck

AU - Raghavan, Srini

AU - Lowell, John

AU - Wenner, Valerie

PY - 1994

Y1 - 1994

N2 - The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.

AB - The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.

UR - http://www.scopus.com/inward/record.url?scp=0028743176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028743176&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0028743176

SN - 0819416703

VL - 2337

SP - 13

EP - 19

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Mathur, Jagdish P.

A2 - Lowell, John

A2 - Chen, Ray T.

PB - Society of Photo-Optical Instrumentation Engineers

ER -