Surface charge effects in silicon wafer cleaning using surfactant-containing solutions

Joong Suck Jeon, Srini Raghavan, John Lowell, Valerie Wenner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJagdish P. Mathur, John Lowell, Ray T. Chen
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages13-19
Number of pages7
ISBN (Print)0819416703
StatePublished - Dec 1 1994
EventOptical Characterization Techniques for High-Performance Microelectronic Device Manufacturing - Austin, TX, USA
Duration: Oct 20 1994Oct 20 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2337
ISSN (Print)0277-786X

Other

OtherOptical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
CityAustin, TX, USA
Period10/20/9410/20/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Jeon, J. S., Raghavan, S., Lowell, J., & Wenner, V. (1994). Surface charge effects in silicon wafer cleaning using surfactant-containing solutions. In J. P. Mathur, J. Lowell, & R. T. Chen (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 13-19). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2337). Society of Photo-Optical Instrumentation Engineers.