Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

Bernal Granados, Fee Li Lie, Anthony J Muscat

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)906-907
Number of pages2
JournalMicroscopy and Microanalysis
Volume18
DOIs
StatePublished - 2012

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Atomic layer deposition
atomic layer epitaxy
Surface chemistry
chemistry
cycles

ASJC Scopus subject areas

  • Instrumentation

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Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition. / Granados, Bernal; Lie, Fee Li; Muscat, Anthony J.

In: Microscopy and Microanalysis, Vol. 18, 2012, p. 906-907.

Research output: Contribution to journalArticle

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