Surface chemistry of III-V semiconductors after wet etching with HCl and H2O2

Pablo Mancheno-Posso, Anthony J. Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

GaAs(100) was immersed in water and aqueous mixtures of isopropyl alcohol, ethylene glycol, acetic acid, glycolic acid, tartaric acid, and HCl with and without the addition of H2O2 to understand the etching mechanism. The surface composition after etching was characterized using x-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Ga and As oxides with high oxidation states dissolve in water, but acids are needed to remove the oxides with low oxidation states. H2O2 oxidized the bulk substrate, and only the acids that have pKa values lower than 4 supported etching. After etching with HCl, the surface is terminated by arsenic chloride (As-Cl).

Original languageEnglish (US)
Title of host publicationSemiconductor Cleaning Science and Technology 14, SCST 14
EditorsT. Hattori, P. W. Mertens, R. E. Novak, J. Ruzyllo
PublisherElectrochemical Society Inc.
Pages227-233
Number of pages7
Edition8
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number8
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
Country/TerritoryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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