Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide

S. L. Heslop, P. Engesser, H. Okorn-Schmidt, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with XPS and spectroscopic ellipsometry. HF was most effective at removing the oxides of both Ge and Si and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH4)2S was characterized with XPS as a function of the solution concentration and with the addition of H2O2. The passivation process was independent of the (NH4)2S concentration and approximately 3 Å of S was deposited or about one layer based on XPS. Addition of H2O2 to very dilute (NH4)2S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H2O2 treatment.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages287-293
Number of pages7
Volume69
Edition8
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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