Abstract
The surface polarization instabilities of a Coulomb-interacting electron-hole pair in a spherical semiconductor quantum dot inside a dielectric medium are studied. Two independent numerical solutions for the ground state are presented which are based on a direct integration of the pair Schrödinger equation or on a diagonalization of the Hamiltonian matrix. For decreasing confinement potential at fixed dot radius, and for decreasing dot radius at fixed confinement potential, it is found that the electron-hole-pair state changes from a volume state, in which both particles are mostly inside the dot, to a surface trapped state, in which the surface polarization causes the carriers to be self-trapped at the surface of the dot. The transition from volume to surface trapped states occurs for parameters which are very close to those of II-VI semiconductors in a glass matrix or in a liquid.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 14136-14142 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 45 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1992 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Surface-polarization instabilities of electron-hole pairs in semiconductor quantum dots. / Bnyai, L.; Gilliot, P.; Hu, Y. Z.; Koch, Stephan W.
In: Physical Review B, Vol. 45, No. 24, 1992, p. 14136-14142.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface-polarization instabilities of electron-hole pairs in semiconductor quantum dots
AU - Bnyai, L.
AU - Gilliot, P.
AU - Hu, Y. Z.
AU - Koch, Stephan W
PY - 1992
Y1 - 1992
N2 - The surface polarization instabilities of a Coulomb-interacting electron-hole pair in a spherical semiconductor quantum dot inside a dielectric medium are studied. Two independent numerical solutions for the ground state are presented which are based on a direct integration of the pair Schrödinger equation or on a diagonalization of the Hamiltonian matrix. For decreasing confinement potential at fixed dot radius, and for decreasing dot radius at fixed confinement potential, it is found that the electron-hole-pair state changes from a volume state, in which both particles are mostly inside the dot, to a surface trapped state, in which the surface polarization causes the carriers to be self-trapped at the surface of the dot. The transition from volume to surface trapped states occurs for parameters which are very close to those of II-VI semiconductors in a glass matrix or in a liquid.
AB - The surface polarization instabilities of a Coulomb-interacting electron-hole pair in a spherical semiconductor quantum dot inside a dielectric medium are studied. Two independent numerical solutions for the ground state are presented which are based on a direct integration of the pair Schrödinger equation or on a diagonalization of the Hamiltonian matrix. For decreasing confinement potential at fixed dot radius, and for decreasing dot radius at fixed confinement potential, it is found that the electron-hole-pair state changes from a volume state, in which both particles are mostly inside the dot, to a surface trapped state, in which the surface polarization causes the carriers to be self-trapped at the surface of the dot. The transition from volume to surface trapped states occurs for parameters which are very close to those of II-VI semiconductors in a glass matrix or in a liquid.
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U2 - 10.1103/PhysRevB.45.14136
DO - 10.1103/PhysRevB.45.14136
M3 - Article
AN - SCOPUS:0001458623
VL - 45
SP - 14136
EP - 14142
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 24
ER -