Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination

Prashant Raghu, Chris Yim, Farhang Shadman, Eric Shero

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Moisture contamination of HfO2 and ZrO2 ultrathin dielectric films, deposited by atomic layer chemical vapor deposition (ALCVD™), is investigated and compared to that of native SiO2. Results show that HfO2 and ZrO2 surfaces adsorb higher amounts of moisture and bind moisture more strongly than SiO2 surfaces. A multilayer model is developed to represent the dynamics of moisture interaction with these three oxides. Using this model, the fundamental kinetic parameters are determined. The adsorption rate constants are of the same order of magnitude for all three surfaces. However, the desorption rate constants for ZrO2 and HfO2 are almost three orders of magnitude lower than that for SiO2. Activation energies for desorption of water molecules from the first two layers are 33, 27, and 19 kJ/mol, for ZrO 2, HfO2, and SiO2, respectively. Results obtained in this study suggest that the HfO2 and ZrO2, as the new dielectric materials, are more prone to moisture contamination than SiO2.

Original languageEnglish (US)
Pages (from-to)1881-1888
Number of pages8
JournalAICHE Journal
Volume50
Issue number8
DOIs
StatePublished - Aug 2004

Fingerprint

Oxides
Adsorption
Contamination
Moisture
Water
Rate constants
Desorption
Dielectric films
Ultrathin films
Kinetic parameters
Chemical vapor deposition
Multilayers
Activation energy
Molecules

Keywords

  • Adsorption
  • Hafnium dioxide
  • Moisture
  • Outgassing
  • Zirconium dioxide

ASJC Scopus subject areas

  • Biotechnology
  • Chemical Engineering(all)
  • Mechanical Engineering
  • Environmental Engineering
  • Polymers and Plastics

Cite this

Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination. / Raghu, Prashant; Yim, Chris; Shadman, Farhang; Shero, Eric.

In: AICHE Journal, Vol. 50, No. 8, 08.2004, p. 1881-1888.

Research output: Contribution to journalArticle

Raghu, Prashant ; Yim, Chris ; Shadman, Farhang ; Shero, Eric. / Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination. In: AICHE Journal. 2004 ; Vol. 50, No. 8. pp. 1881-1888.
@article{de8ab31853924480a21c608d297b254c,
title = "Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination",
abstract = "Moisture contamination of HfO2 and ZrO2 ultrathin dielectric films, deposited by atomic layer chemical vapor deposition (ALCVD™), is investigated and compared to that of native SiO2. Results show that HfO2 and ZrO2 surfaces adsorb higher amounts of moisture and bind moisture more strongly than SiO2 surfaces. A multilayer model is developed to represent the dynamics of moisture interaction with these three oxides. Using this model, the fundamental kinetic parameters are determined. The adsorption rate constants are of the same order of magnitude for all three surfaces. However, the desorption rate constants for ZrO2 and HfO2 are almost three orders of magnitude lower than that for SiO2. Activation energies for desorption of water molecules from the first two layers are 33, 27, and 19 kJ/mol, for ZrO 2, HfO2, and SiO2, respectively. Results obtained in this study suggest that the HfO2 and ZrO2, as the new dielectric materials, are more prone to moisture contamination than SiO2.",
keywords = "Adsorption, Hafnium dioxide, Moisture, Outgassing, Zirconium dioxide",
author = "Prashant Raghu and Chris Yim and Farhang Shadman and Eric Shero",
year = "2004",
month = "8",
doi = "10.1002/aic.10148",
language = "English (US)",
volume = "50",
pages = "1881--1888",
journal = "AICHE Journal",
issn = "0001-1541",
publisher = "American Institute of Chemical Engineers",
number = "8",

}

TY - JOUR

T1 - Susceptibility of SiO2, ZrO2, and HfO2 dielectrics to moisture contamination

AU - Raghu, Prashant

AU - Yim, Chris

AU - Shadman, Farhang

AU - Shero, Eric

PY - 2004/8

Y1 - 2004/8

N2 - Moisture contamination of HfO2 and ZrO2 ultrathin dielectric films, deposited by atomic layer chemical vapor deposition (ALCVD™), is investigated and compared to that of native SiO2. Results show that HfO2 and ZrO2 surfaces adsorb higher amounts of moisture and bind moisture more strongly than SiO2 surfaces. A multilayer model is developed to represent the dynamics of moisture interaction with these three oxides. Using this model, the fundamental kinetic parameters are determined. The adsorption rate constants are of the same order of magnitude for all three surfaces. However, the desorption rate constants for ZrO2 and HfO2 are almost three orders of magnitude lower than that for SiO2. Activation energies for desorption of water molecules from the first two layers are 33, 27, and 19 kJ/mol, for ZrO 2, HfO2, and SiO2, respectively. Results obtained in this study suggest that the HfO2 and ZrO2, as the new dielectric materials, are more prone to moisture contamination than SiO2.

AB - Moisture contamination of HfO2 and ZrO2 ultrathin dielectric films, deposited by atomic layer chemical vapor deposition (ALCVD™), is investigated and compared to that of native SiO2. Results show that HfO2 and ZrO2 surfaces adsorb higher amounts of moisture and bind moisture more strongly than SiO2 surfaces. A multilayer model is developed to represent the dynamics of moisture interaction with these three oxides. Using this model, the fundamental kinetic parameters are determined. The adsorption rate constants are of the same order of magnitude for all three surfaces. However, the desorption rate constants for ZrO2 and HfO2 are almost three orders of magnitude lower than that for SiO2. Activation energies for desorption of water molecules from the first two layers are 33, 27, and 19 kJ/mol, for ZrO 2, HfO2, and SiO2, respectively. Results obtained in this study suggest that the HfO2 and ZrO2, as the new dielectric materials, are more prone to moisture contamination than SiO2.

KW - Adsorption

KW - Hafnium dioxide

KW - Moisture

KW - Outgassing

KW - Zirconium dioxide

UR - http://www.scopus.com/inward/record.url?scp=3242779352&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242779352&partnerID=8YFLogxK

U2 - 10.1002/aic.10148

DO - 10.1002/aic.10148

M3 - Article

AN - SCOPUS:3242779352

VL - 50

SP - 1881

EP - 1888

JO - AICHE Journal

JF - AICHE Journal

SN - 0001-1541

IS - 8

ER -