Suspended individual SWCNT characterization via bottom gate FET configuration

Mingguang Tuo, Lu Wang, Moh R. Amer, Xiaoju Yu, Stephen B. Cronin, Hao Xin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The microwave transmission properties of suspended, quasi-metallic individual single-walled carbon nanotubes (SWCNTs) with a bottom gate field-effect transistor (FET) configuration have been investigated up to 10 GHz by standard two-port S-parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission-line test fixture is designed to overcome the parasitic and mismatch issues. An open-through de-embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high-frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.

Original languageEnglish (US)
Pages (from-to)2610-2614
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume59
Issue number10
DOIs
StatePublished - Oct 2017

Keywords

  • bottom gate FET
  • de-embedding
  • equivalent circuit model
  • individual SWCNT
  • suspended
  • tapered transmission-line

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Suspended individual SWCNT characterization via bottom gate FET configuration'. Together they form a unique fingerprint.

Cite this