Abstract
Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intra-excitonic heavy-hole 1s-2p transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.
Original language | English (US) |
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Article number | 115311 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 89 |
Issue number | 11 |
DOIs | |
State | Published - Mar 17 2014 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics