Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intra-excitonic heavy-hole 1s-2p transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Mar 17 2014|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics