Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells

S. Ten, M. F. Krol, B. P. McGinnis, M. J. Hayduk, Galina Khitrova, Nasser N Peyghambarian

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present a detailed investigation of electron tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells as a function of different excitation and temperature conditions. We show that tunneling dynamics depend strongly on the initial carrier temperature and momentum. For example, electron and hole tunneling out of the narrow well is complete at low temperature. However at room temperature carriers do not exhibit any tunneling kinetics. We propose a simple kinetic model which describes the observed population dynamics at different carrier densities, temperatures, and excitation conditions.

Original languageEnglish (US)
Pages (from-to)1526-1531
Number of pages6
JournalJournal of Applied Physics
Volume79
Issue number3
StatePublished - Feb 1 1996

Fingerprint

electron tunneling
quantum wells
kinetics
temperature
excitation
momentum
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells. / Ten, S.; Krol, M. F.; McGinnis, B. P.; Hayduk, M. J.; Khitrova, Galina; Peyghambarian, Nasser N.

In: Journal of Applied Physics, Vol. 79, No. 3, 01.02.1996, p. 1526-1531.

Research output: Contribution to journalArticle

@article{6dab784e8ae14d5599df1aadfa31ea34,
title = "Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells",
abstract = "We present a detailed investigation of electron tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells as a function of different excitation and temperature conditions. We show that tunneling dynamics depend strongly on the initial carrier temperature and momentum. For example, electron and hole tunneling out of the narrow well is complete at low temperature. However at room temperature carriers do not exhibit any tunneling kinetics. We propose a simple kinetic model which describes the observed population dynamics at different carrier densities, temperatures, and excitation conditions.",
author = "S. Ten and Krol, {M. F.} and McGinnis, {B. P.} and Hayduk, {M. J.} and Galina Khitrova and Peyghambarian, {Nasser N}",
year = "1996",
month = "2",
day = "1",
language = "English (US)",
volume = "79",
pages = "1526--1531",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells

AU - Ten, S.

AU - Krol, M. F.

AU - McGinnis, B. P.

AU - Hayduk, M. J.

AU - Khitrova, Galina

AU - Peyghambarian, Nasser N

PY - 1996/2/1

Y1 - 1996/2/1

N2 - We present a detailed investigation of electron tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells as a function of different excitation and temperature conditions. We show that tunneling dynamics depend strongly on the initial carrier temperature and momentum. For example, electron and hole tunneling out of the narrow well is complete at low temperature. However at room temperature carriers do not exhibit any tunneling kinetics. We propose a simple kinetic model which describes the observed population dynamics at different carrier densities, temperatures, and excitation conditions.

AB - We present a detailed investigation of electron tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells as a function of different excitation and temperature conditions. We show that tunneling dynamics depend strongly on the initial carrier temperature and momentum. For example, electron and hole tunneling out of the narrow well is complete at low temperature. However at room temperature carriers do not exhibit any tunneling kinetics. We propose a simple kinetic model which describes the observed population dynamics at different carrier densities, temperatures, and excitation conditions.

UR - http://www.scopus.com/inward/record.url?scp=0030085203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030085203&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030085203

VL - 79

SP - 1526

EP - 1531

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -