Temperature- and carrier-density-dependent electron tunneling kinetics in (Ga,ln)As/(Al,In)As asymmetric double quantum wells

S. Ten, M. F. Krol, B. P. McGinnis, M. J. Hayduk, Galina Khitrova, Nasser N Peyghambarian

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Abstract

We present a detailed investigation of electron tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells as a function of different excitation and temperature conditions. We show that tunneling dynamics depend strongly on the initial carrier temperature and momentum. For example, electron and hole tunneling out of the narrow well is complete at low temperature. However at room temperature carriers do not exhibit any tunneling kinetics. We propose a simple kinetic model which describes the observed population dynamics at different carrier densities, temperatures, and excitation conditions.

Original languageEnglish (US)
Pages (from-to)1526-1531
Number of pages6
JournalJournal of Applied Physics
Volume79
Issue number3
Publication statusPublished - Feb 1 1996

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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