Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Nathaniel A. Riordan, Chaturvedi Gogineni, Shane R. Johnson, Xianfeng Lu, Tom Tiedje, Ding Ding, Yong Hang Zhang, Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz, Stephan W. Koch

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

Original languageEnglish (US)
Pages (from-to)1799-1804
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume23
Issue number10
DOIs
StatePublished - Oct 1 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs'. Together they form a unique fingerprint.

  • Cite this

    Riordan, N. A., Gogineni, C., Johnson, S. R., Lu, X., Tiedje, T., Ding, D., Zhang, Y. H., Fritz, R., Kolata, K., Chatterjee, S., Volz, K., & Koch, S. W. (2012). Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs. Journal of Materials Science: Materials in Electronics, 23(10), 1799-1804. https://doi.org/10.1007/s10854-012-0665-1