Temperature dependence of radiative and Auger losses in quantum wells

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17 Citations (Scopus)

Abstract

Fully microscopic models are used to study the temperature dependence of carrier losses due to radiative and Auger recombination processes in semiconductor quantum wells. The temperature (T) dependence of these loss processes is shown to depend on the carrier density, on details of the bandstructure, and on the Coulomb effects. While classical estimates based on simplified models predict a density independent 1/T-variation of the radiative losses, we find for the example of typical 1.3 μ InGaAsP structures a dependence closer to 1/T3 at low densities. At high densities the temperature dependence is much weaker and can no longer be described by a simple power law. For a given density the Auger losses can be described by an exponential temperature dependence for limited temperature ranges if one uses a density dependent activation energy that can take positive or negative values.

Original languageEnglish (US)
Pages (from-to)185-191
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume44
Issue number2
DOIs
StatePublished - Feb 2008

Fingerprint

Semiconductor quantum wells
quantum wells
temperature dependence
Temperature
radiative recombination
Carrier concentration
Activation energy
activation energy
temperature
estimates

Keywords

  • Auger recombination
  • Gain
  • InGaAsP
  • Modeling
  • Quantum-well lasers
  • Spontaneous emission
  • Threshold current

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Temperature dependence of radiative and Auger losses in quantum wells",
abstract = "Fully microscopic models are used to study the temperature dependence of carrier losses due to radiative and Auger recombination processes in semiconductor quantum wells. The temperature (T) dependence of these loss processes is shown to depend on the carrier density, on details of the bandstructure, and on the Coulomb effects. While classical estimates based on simplified models predict a density independent 1/T-variation of the radiative losses, we find for the example of typical 1.3 μ InGaAsP structures a dependence closer to 1/T3 at low densities. At high densities the temperature dependence is much weaker and can no longer be described by a simple power law. For a given density the Auger losses can be described by an exponential temperature dependence for limited temperature ranges if one uses a density dependent activation energy that can take positive or negative values.",
keywords = "Auger recombination, Gain, InGaAsP, Modeling, Quantum-well lasers, Spontaneous emission, Threshold current",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
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T1 - Temperature dependence of radiative and Auger losses in quantum wells

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2008/2

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N2 - Fully microscopic models are used to study the temperature dependence of carrier losses due to radiative and Auger recombination processes in semiconductor quantum wells. The temperature (T) dependence of these loss processes is shown to depend on the carrier density, on details of the bandstructure, and on the Coulomb effects. While classical estimates based on simplified models predict a density independent 1/T-variation of the radiative losses, we find for the example of typical 1.3 μ InGaAsP structures a dependence closer to 1/T3 at low densities. At high densities the temperature dependence is much weaker and can no longer be described by a simple power law. For a given density the Auger losses can be described by an exponential temperature dependence for limited temperature ranges if one uses a density dependent activation energy that can take positive or negative values.

AB - Fully microscopic models are used to study the temperature dependence of carrier losses due to radiative and Auger recombination processes in semiconductor quantum wells. The temperature (T) dependence of these loss processes is shown to depend on the carrier density, on details of the bandstructure, and on the Coulomb effects. While classical estimates based on simplified models predict a density independent 1/T-variation of the radiative losses, we find for the example of typical 1.3 μ InGaAsP structures a dependence closer to 1/T3 at low densities. At high densities the temperature dependence is much weaker and can no longer be described by a simple power law. For a given density the Auger losses can be described by an exponential temperature dependence for limited temperature ranges if one uses a density dependent activation energy that can take positive or negative values.

KW - Auger recombination

KW - Gain

KW - InGaAsP

KW - Modeling

KW - Quantum-well lasers

KW - Spontaneous emission

KW - Threshold current

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