@inproceedings{6fc2a7e75deb4fb3aef05cd562991ca9,

title = "Temperature dependence of radiative and Auger losses in quantum well lasers",

abstract = "Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.",

keywords = "Auger recombination, Gain, Photo luminescence, Semiconductor laser",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

year = "2008",

month = apr,

day = "1",

doi = "10.1117/12.761976",

language = "English (US)",

isbn = "9780819470645",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics and Simulation of Optoelectronic Devices XVI",

note = "Physics and Simulation of Optoelectronic Devices XVI ; Conference date: 21-01-2008 Through 24-01-2008",

}