Temperature dependence of radiative and Auger losses in quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6889
DOIs
StatePublished - 2008
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: Jan 21 2008Jan 24 2008

Other

OtherPhysics and Simulation of Optoelectronic Devices XVI
CountryUnited States
CitySan Jose, CA
Period1/21/081/24/08

Fingerprint

Quantum well lasers
quantum well lasers
temperature dependence
Carrier concentration
Temperature
temperature
semiconductor lasers
Semiconductor lasers
activation energy
Activation energy
thresholds
estimates

Keywords

  • Auger recombination
  • Gain
  • Photo luminescence
  • Semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2008). Temperature dependence of radiative and Auger losses in quantum well lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6889). [68890E] https://doi.org/10.1117/12.761976

Temperature dependence of radiative and Auger losses in quantum well lasers. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6889 2008. 68890E.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2008, Temperature dependence of radiative and Auger losses in quantum well lasers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6889, 68890E, Physics and Simulation of Optoelectronic Devices XVI, San Jose, CA, United States, 1/21/08. https://doi.org/10.1117/12.761976
Hader J, Moloney JV, Koch SW. Temperature dependence of radiative and Auger losses in quantum well lasers. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6889. 2008. 68890E https://doi.org/10.1117/12.761976
Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Temperature dependence of radiative and Auger losses in quantum well lasers. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6889 2008.
@inproceedings{6fc2a7e75deb4fb3aef05cd562991ca9,
title = "Temperature dependence of radiative and Auger losses in quantum well lasers",
abstract = "Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.",
keywords = "Auger recombination, Gain, Photo luminescence, Semiconductor laser",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2008",
doi = "10.1117/12.761976",
language = "English (US)",
isbn = "9780819470645",
volume = "6889",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Temperature dependence of radiative and Auger losses in quantum well lasers

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2008

Y1 - 2008

N2 - Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.

AB - Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.

KW - Auger recombination

KW - Gain

KW - Photo luminescence

KW - Semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=41149145546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149145546&partnerID=8YFLogxK

U2 - 10.1117/12.761976

DO - 10.1117/12.761976

M3 - Conference contribution

AN - SCOPUS:41149145546

SN - 9780819470645

VL - 6889

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -