Temperature dependence of radiative and Auger losses in quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Fully microscopic many-body models are used to investigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the microscopic models reveal for the example of a typical InGaAsP-based structure a 1/T 3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threshold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVI
DOIs
StatePublished - Apr 1 2008
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: Jan 21 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6889
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XVI
CountryUnited States
CitySan Jose, CA
Period1/21/081/24/08

Keywords

  • Auger recombination
  • Gain
  • Photo luminescence
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hader, J., Moloney, J. V., & Koch, S. W. (2008). Temperature dependence of radiative and Auger losses in quantum well lasers. In Physics and Simulation of Optoelectronic Devices XVI [68890E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6889). https://doi.org/10.1117/12.761976