Temperature-dependence of the internal efficiency droop in GaN-based diodes

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Abstract

The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.

Original languageEnglish (US)
Article number181127
JournalApplied Physics Letters
Volume99
Issue number18
DOIs
StatePublished - Oct 31 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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