Terahertz detection of many-body signatures in semiconductor heterostructures

Sangam Chatterjee, Torben Grunwald, Stephan W Koch, Galina Khitrova, Hyatt M. Gibbs, Rudolf Hey

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.

Original languageEnglish (US)
Title of host publicationAdvances in Solid State Physics
Pages269-280
Number of pages12
Volume48
DOIs
Publication statusPublished - 2009

Publication series

NameAdvances in Solid State Physics
Volume48
ISSN (Print)14384329

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chatterjee, S., Grunwald, T., Koch, S. W., Khitrova, G., Gibbs, H. M., & Hey, R. (2009). Terahertz detection of many-body signatures in semiconductor heterostructures. In Advances in Solid State Physics (Vol. 48, pp. 269-280). (Advances in Solid State Physics; Vol. 48). https://doi.org/10.1007/978-3-540-85859-1_21