Abstract
This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.
| Original language | English (US) |
|---|---|
| Title of host publication | Advances in Solid State Physics |
| Pages | 269-280 |
| Number of pages | 12 |
| Volume | 48 |
| DOIs | |
| State | Published - 2009 |
Publication series
| Name | Advances in Solid State Physics |
|---|---|
| Volume | 48 |
| ISSN (Print) | 14384329 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Terahertz detection of many-body signatures in semiconductor heterostructures. / Chatterjee, Sangam; Grunwald, Torben; Koch, Stephan W; Khitrova, Galina; Gibbs, Hyatt M.; Hey, Rudolf.
Advances in Solid State Physics. Vol. 48 2009. p. 269-280 (Advances in Solid State Physics; Vol. 48).Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Terahertz detection of many-body signatures in semiconductor heterostructures
AU - Chatterjee, Sangam
AU - Grunwald, Torben
AU - Koch, Stephan W
AU - Khitrova, Galina
AU - Gibbs, Hyatt M.
AU - Hey, Rudolf
PY - 2009
Y1 - 2009
N2 - This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.
AB - This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.
UR - http://www.scopus.com/inward/record.url?scp=57049154016&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57049154016&partnerID=8YFLogxK
U2 - 10.1007/978-3-540-85859-1_21
DO - 10.1007/978-3-540-85859-1_21
M3 - Chapter
AN - SCOPUS:57049154016
SN - 9783540858584
VL - 48
T3 - Advances in Solid State Physics
SP - 269
EP - 280
BT - Advances in Solid State Physics
ER -