Terahertz detection of many-body signatures in semiconductor heterostructures

Sangam Chatterjee; Torben Grunwald; Stephan W. Koch; Galina Khitrova; Hyatt M. Gibbs; Rudolf Hey

doi:10.1007/978-3-540-85859-1_21

Terahertz detection of many-body signatures in semiconductor heterostructures

Sangam Chatterjee, Torben Grunwald, Stephan W. Koch, Galina Khitrova, Hyatt M. Gibbs, Rudolf Hey

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.

Original language	English (US)
Title of host publication	Advances in Solid State Physics
Editors	Rolf Haug
Pages	269-280
Number of pages	12
DOIs	https://doi.org/10.1007/978-3-540-85859-1_21
State	Published - Jan 1 2009

Publication series

Name	Advances in Solid State Physics
Volume	48
ISSN (Print)	1438-4329

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1007/978-3-540-85859-1_21

Fingerprint Dive into the research topics of 'Terahertz detection of many-body signatures in semiconductor heterostructures'. Together they form a unique fingerprint.

Cite this

@inbook{22282898fcba40f393f4cef6824ebcd4,

title = "Terahertz detection of many-body signatures in semiconductor heterostructures",

abstract = "This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.",

author = "Sangam Chatterjee and Torben Grunwald and Koch, {Stephan W.} and Galina Khitrova and Gibbs, {Hyatt M.} and Rudolf Hey",

year = "2009",

month = jan,

day = "1",

doi = "10.1007/978-3-540-85859-1_21",

language = "English (US)",

isbn = "9783540858584",

series = "Advances in Solid State Physics",

pages = "269--280",

editor = "Rolf Haug",

booktitle = "Advances in Solid State Physics",

}

TY - CHAP

T1 - Terahertz detection of many-body signatures in semiconductor heterostructures

AU - Chatterjee, Sangam

AU - Grunwald, Torben

AU - Koch, Stephan W.

AU - Khitrova, Galina

AU - Gibbs, Hyatt M.

AU - Hey, Rudolf

PY - 2009/1/1

Y1 - 2009/1/1

N2 - This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.

AB - This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures.

UR - http://www.scopus.com/inward/record.url?scp=57049154016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57049154016&partnerID=8YFLogxK

U2 - 10.1007/978-3-540-85859-1_21

DO - 10.1007/978-3-540-85859-1_21

M3 - Chapter

AN - SCOPUS:57049154016

SN - 9783540858584

T3 - Advances in Solid State Physics

SP - 269

EP - 280

BT - Advances in Solid State Physics

A2 - Haug, Rolf

ER -