Terahertz-induced exciton signatures in semiconductors

C. N. Böttge, S. W. Koch, L. Schneebeli, B. Breddermann, A. C. Klettke, M. Kira, B. Ewers, N. S. Köster, S. Chatterjee

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This paper discusses recent studies involving time-resolved optical and terahertz (THz) fields in the linear and nonlinear regime. An overview of the microscopic modeling scheme is presented and applied to analyze a variety of experimental results. The examples include coherent excitons in weak and strong THz fields, Rabi splitting and ionization of intra-excitonic transitions, THz studies in semiconductor microcavities, and the THz manipulation of excitonic transitions.

Original languageEnglish (US)
Pages (from-to)1768-1772
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume250
Issue number9
DOIs
StatePublished - Sep 2013

Keywords

  • Microcavities
  • Photoluminescence
  • Rabi splitting
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Böttge, C. N., Koch, S. W., Schneebeli, L., Breddermann, B., Klettke, A. C., Kira, M., Ewers, B., Köster, N. S., & Chatterjee, S. (2013). Terahertz-induced exciton signatures in semiconductors. Physica Status Solidi (B) Basic Research, 250(9), 1768-1772. https://doi.org/10.1002/pssb.201200704