Terahertz-induced exciton signatures in semiconductors

C. N. Böttge, Stephan W Koch, L. Schneebeli, B. Breddermann, A. C. Klettke, M. Kira, B. Ewers, N. S. Köster, S. Chatterjee

Research output: Contribution to journalArticle

4 Scopus citations


This paper discusses recent studies involving time-resolved optical and terahertz (THz) fields in the linear and nonlinear regime. An overview of the microscopic modeling scheme is presented and applied to analyze a variety of experimental results. The examples include coherent excitons in weak and strong THz fields, Rabi splitting and ionization of intra-excitonic transitions, THz studies in semiconductor microcavities, and the THz manipulation of excitonic transitions.

Original languageEnglish (US)
Pages (from-to)1768-1772
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number9
Publication statusPublished - Sep 2013
Externally publishedYes



  • Microcavities
  • Photoluminescence
  • Rabi splitting
  • Terahertz

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Böttge, C. N., Koch, S. W., Schneebeli, L., Breddermann, B., Klettke, A. C., Kira, M., ... Chatterjee, S. (2013). Terahertz-induced exciton signatures in semiconductors. Physica Status Solidi (B) Basic Research, 250(9), 1768-1772. https://doi.org/10.1002/pssb.201200704