Tertiarybutylarsine as a substitute for AsH3: Application to InGaAs/InP photonic integrated circuits

B. I. Miller, M. G. Young, U. Koren, T. L. Koch, M. Oron, R. P. Gnall, J. E. Zucker, K. E. Jones, F. Hernandez-Gil, J. L. DeMiguel

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations


It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH3-grown layers. As a consequence conventional InGaAsP lasers at 1.3 μm were grown by TBA and were found to have properties as good as those of AsH3 lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH3 are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.

Original languageEnglish (US)
Number of pages4
StatePublished - 1990
Externally publishedYes
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: Apr 23 1990Apr 25 1990


OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA

ASJC Scopus subject areas

  • Engineering(all)


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