Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

Kyle Haston, H. Bradford Barber, Lars R Furenlid, Esen Salçin, Vaibhav Bora

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {S i(t)} | {x, y, z, E}).

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8143
DOIs
StatePublished - 2011
EventMedical Applications of Radiation Detectors - San Diego, CA, United States
Duration: Aug 24 2011Aug 25 2011

Other

OtherMedical Applications of Radiation Detectors
CountryUnited States
CitySan Diego, CA
Period8/24/118/25/11

Fingerprint

Semiconductor detectors
Time Domain
Semiconductors
Monitor
Pixel
Pixels
pixels
Detector
Gamma rays
detectors
Electrodes
Detectors
Charge transfer
Electrode
Gamma Rays
Charge trapping
Astronomy
electrodes
Charge Transport
Maximum likelihood

Keywords

  • CdTe
  • CdZnTe
  • CZT
  • electronic readout
  • induced signals
  • pixel detectors
  • Ramo's theorem
  • semiconductor detector
  • test apparatus
  • TlBr

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Haston, K., Barber, H. B., Furenlid, L. R., Salçin, E., & Bora, V. (2011). Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8143). [81430P] https://doi.org/10.1117/12.898365

Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays. / Haston, Kyle; Barber, H. Bradford; Furenlid, Lars R; Salçin, Esen; Bora, Vaibhav.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8143 2011. 81430P.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Haston, K, Barber, HB, Furenlid, LR, Salçin, E & Bora, V 2011, Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8143, 81430P, Medical Applications of Radiation Detectors, San Diego, CA, United States, 8/24/11. https://doi.org/10.1117/12.898365
Haston K, Barber HB, Furenlid LR, Salçin E, Bora V. Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8143. 2011. 81430P https://doi.org/10.1117/12.898365
Haston, Kyle ; Barber, H. Bradford ; Furenlid, Lars R ; Salçin, Esen ; Bora, Vaibhav. / Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8143 2011.
@inproceedings{96a492b2abaa4b6e9f1a3e857659b691,
title = "Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays",
abstract = "Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {S i(t)} | {x, y, z, E}).",
keywords = "CdTe, CdZnTe, CZT, electronic readout, induced signals, pixel detectors, Ramo's theorem, semiconductor detector, test apparatus, TlBr",
author = "Kyle Haston and Barber, {H. Bradford} and Furenlid, {Lars R} and Esen Sal{\cc}in and Vaibhav Bora",
year = "2011",
doi = "10.1117/12.898365",
language = "English (US)",
isbn = "9780819487537",
volume = "8143",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

AU - Haston, Kyle

AU - Barber, H. Bradford

AU - Furenlid, Lars R

AU - Salçin, Esen

AU - Bora, Vaibhav

PY - 2011

Y1 - 2011

N2 - Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {S i(t)} | {x, y, z, E}).

AB - Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {S i(t)} | {x, y, z, E}).

KW - CdTe

KW - CdZnTe

KW - CZT

KW - electronic readout

KW - induced signals

KW - pixel detectors

KW - Ramo's theorem

KW - semiconductor detector

KW - test apparatus

KW - TlBr

UR - http://www.scopus.com/inward/record.url?scp=80054884990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054884990&partnerID=8YFLogxK

U2 - 10.1117/12.898365

DO - 10.1117/12.898365

M3 - Conference contribution

AN - SCOPUS:80054884990

SN - 9780819487537

VL - 8143

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -