The effect of hafnium or zirconium contamination on MOS processes

B. Vermeire, K. Delbridge, V. Pandit, H. G. Parks, Srini Raghavan, K. Ramkumar, S. Geha, J. Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Hf and Zr contamination during immersion in process solutions is most likely to occur in neutral or caustic solutions. Both Hf and Zr contamination are introduced onto the wafer surface if they are present in an APM solution (which is caustic), but such contamination is easily removed using existing cleans. If contamination remains on a wafer, an effect on gate oxide integrity using ramped voltage testing is only observed at very high concentrations of Hf. Time dependent dielectric breakdown results are affected at lower levels of contamination. This is true particularly if the contamination is introduced using an APM solution. Wafer-to-wafer cross contamination can also occur in a thermal reactor during high temperature anneals of high-k dielectric layers.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Pages299-303
Number of pages5
StatePublished - 2002
Event13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - Boston, MA, United States
Duration: Apr 30 2002May 2 2002

Other

Other13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference
CountryUnited States
CityBoston, MA
Period4/30/025/2/02

Fingerprint

Hafnium
Zirconium
Contamination
High temperature reactors
Electric breakdown
Oxides
Testing
Electric potential

Keywords

  • Cleaning
  • Contamination
  • Hafnium
  • Hf
  • High-k dielectric
  • Zirconium
  • Zr

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Vermeire, B., Delbridge, K., Pandit, V., Parks, H. G., Raghavan, S., Ramkumar, K., ... Jeon, J. (2002). The effect of hafnium or zirconium contamination on MOS processes. In IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings (pp. 299-303)

The effect of hafnium or zirconium contamination on MOS processes. / Vermeire, B.; Delbridge, K.; Pandit, V.; Parks, H. G.; Raghavan, Srini; Ramkumar, K.; Geha, S.; Jeon, J.

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings. 2002. p. 299-303.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vermeire, B, Delbridge, K, Pandit, V, Parks, HG, Raghavan, S, Ramkumar, K, Geha, S & Jeon, J 2002, The effect of hafnium or zirconium contamination on MOS processes. in IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings. pp. 299-303, 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Boston, MA, United States, 4/30/02.
Vermeire B, Delbridge K, Pandit V, Parks HG, Raghavan S, Ramkumar K et al. The effect of hafnium or zirconium contamination on MOS processes. In IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings. 2002. p. 299-303
Vermeire, B. ; Delbridge, K. ; Pandit, V. ; Parks, H. G. ; Raghavan, Srini ; Ramkumar, K. ; Geha, S. ; Jeon, J. / The effect of hafnium or zirconium contamination on MOS processes. IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings. 2002. pp. 299-303
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