The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them

S. Verhaverbeke; M. Meuris; P. W. Mertens; M. M. Heyns; Ara Philipossian; D. Graf; A. Schnegg

doi:10.1109/IEDM.1991.235421

The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them

S. Verhaverbeke, M. Meuris, P. W. Mertens, M. M. Heyns, Ara Philipossian, D. Graf, A. Schnegg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

49 Scopus citations

Abstract

The effect of metallic contamination on the dielectric breakdown of thermal oxide layers is investigated. Wafers were intentionally contaminated with Ca, Zn, Fe, Cu or Al. The oxidation behavior of the contaminants and their effect on the Si surface roughness were investigated and correlated with the oxide breakdown properties. It was observed that Ca interacts strongly with the Si substrate during ramp-up. This results in a large increase in the Si surface roughness and poor breakdown properties of the thermal oxide layer. Fe degrades the oxide integrity by the formation of defect spots during the oxidation and Al induces damage under the SiO₂/poly-Si interface. Metals such as Cu and Zn diffuse easily in the Si substrate and, consequently, do not have a large impact on the oxide quality. Standard grade chemicals are the main source for the metallic impurities. After switching to ultrapure chemicals, the DI-water distribution system becomes the limiting factor. Some techniques to reduce the contamination and Si-surface roughening are presented.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	71-74
Number of pages	4
Volume	1991-January
ISBN (Print)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235421
State	Published - 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: Dec 8 1991 → Dec 11 1991

Other

Other	International Electron Devices Meeting, IEDM 1991
Country	United States
City	Washington
Period	12/8/91 → 12/11/91

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/IEDM.1991.235421

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Verhaverbeke, S., Meuris, M., Mertens, P. W., Heyns, M. M., Philipossian, A., Graf, D., & Schnegg, A. (1991). The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 1991-January, pp. 71-74). [235421] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235421

The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them. / Verhaverbeke, S.; Meuris, M.; Mertens, P. W.; Heyns, M. M.; Philipossian, Ara; Graf, D.; Schnegg, A.

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. p. 71-74 235421.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Verhaverbeke, S, Meuris, M, Mertens, PW, Heyns, MM, Philipossian, A, Graf, D & Schnegg, A 1991, The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them. in Technical Digest - International Electron Devices Meeting, IEDM. vol. 1991-January, 235421, Institute of Electrical and Electronics Engineers Inc., pp. 71-74, International Electron Devices Meeting, IEDM 1991, Washington, United States, 12/8/91. https://doi.org/10.1109/IEDM.1991.235421

Verhaverbeke S, Meuris M, Mertens PW, Heyns MM, Philipossian A, Graf D et al. The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them. In Technical Digest - International Electron Devices Meeting, IEDM. Vol. 1991-January. Institute of Electrical and Electronics Engineers Inc. 1991. p. 71-74. 235421 https://doi.org/10.1109/IEDM.1991.235421

Verhaverbeke, S. ; Meuris, M. ; Mertens, P. W. ; Heyns, M. M. ; Philipossian, Ara ; Graf, D. ; Schnegg, A. / The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 1991-January Institute of Electrical and Electronics Engineers Inc., 1991. pp. 71-74

@inproceedings{89078183ccc14f39b07eb1743f4a4322,

title = "The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them",

abstract = "The effect of metallic contamination on the dielectric breakdown of thermal oxide layers is investigated. Wafers were intentionally contaminated with Ca, Zn, Fe, Cu or Al. The oxidation behavior of the contaminants and their effect on the Si surface roughness were investigated and correlated with the oxide breakdown properties. It was observed that Ca interacts strongly with the Si substrate during ramp-up. This results in a large increase in the Si surface roughness and poor breakdown properties of the thermal oxide layer. Fe degrades the oxide integrity by the formation of defect spots during the oxidation and Al induces damage under the SiO2/poly-Si interface. Metals such as Cu and Zn diffuse easily in the Si substrate and, consequently, do not have a large impact on the oxide quality. Standard grade chemicals are the main source for the metallic impurities. After switching to ultrapure chemicals, the DI-water distribution system becomes the limiting factor. Some techniques to reduce the contamination and Si-surface roughening are presented.",

author = "S. Verhaverbeke and M. Meuris and Mertens, {P. W.} and Heyns, {M. M.} and Ara Philipossian and D. Graf and A. Schnegg",

year = "1991",

doi = "10.1109/IEDM.1991.235421",

language = "English (US)",

isbn = "0780302435",

volume = "1991-January",

pages = "71--74",

booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",

}

TY - GEN

T1 - The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them

AU - Verhaverbeke, S.

AU - Meuris, M.

AU - Mertens, P. W.

AU - Heyns, M. M.

AU - Philipossian, Ara

AU - Graf, D.

AU - Schnegg, A.

PY - 1991

Y1 - 1991

N2 - The effect of metallic contamination on the dielectric breakdown of thermal oxide layers is investigated. Wafers were intentionally contaminated with Ca, Zn, Fe, Cu or Al. The oxidation behavior of the contaminants and their effect on the Si surface roughness were investigated and correlated with the oxide breakdown properties. It was observed that Ca interacts strongly with the Si substrate during ramp-up. This results in a large increase in the Si surface roughness and poor breakdown properties of the thermal oxide layer. Fe degrades the oxide integrity by the formation of defect spots during the oxidation and Al induces damage under the SiO2/poly-Si interface. Metals such as Cu and Zn diffuse easily in the Si substrate and, consequently, do not have a large impact on the oxide quality. Standard grade chemicals are the main source for the metallic impurities. After switching to ultrapure chemicals, the DI-water distribution system becomes the limiting factor. Some techniques to reduce the contamination and Si-surface roughening are presented.

AB - The effect of metallic contamination on the dielectric breakdown of thermal oxide layers is investigated. Wafers were intentionally contaminated with Ca, Zn, Fe, Cu or Al. The oxidation behavior of the contaminants and their effect on the Si surface roughness were investigated and correlated with the oxide breakdown properties. It was observed that Ca interacts strongly with the Si substrate during ramp-up. This results in a large increase in the Si surface roughness and poor breakdown properties of the thermal oxide layer. Fe degrades the oxide integrity by the formation of defect spots during the oxidation and Al induces damage under the SiO2/poly-Si interface. Metals such as Cu and Zn diffuse easily in the Si substrate and, consequently, do not have a large impact on the oxide quality. Standard grade chemicals are the main source for the metallic impurities. After switching to ultrapure chemicals, the DI-water distribution system becomes the limiting factor. Some techniques to reduce the contamination and Si-surface roughening are presented.

UR - http://www.scopus.com/inward/record.url?scp=84954092004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954092004&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1991.235421

DO - 10.1109/IEDM.1991.235421

M3 - Conference contribution

AN - SCOPUS:84954092004

SN - 0780302435

VL - 1991-January

SP - 71

EP - 74

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Electron Devices Meeting, IEDM 1991

Y2 - 8 December 1991 through 11 December 1991

ER -