The effects of electron-hole Coulomb interaction in semiconductor lasers

Weng W. Chow, Stephan W Koch, Murray Sargent

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A recent many-body theory is applied to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The results show nonneligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The many-body Coulomb corrections also result in a different prediction of filamentation effects in semiconductor lasers.

Original languageEnglish (US)
Pages (from-to)1052-1057
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume26
Issue number6
DOIs
StatePublished - Jun 1990

Fingerprint

Coulomb interactions
Semiconductor lasers
semiconductor lasers
Electrons
Refractive index
Energy gap
interactions
refractivity
augmentation
predictions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

The effects of electron-hole Coulomb interaction in semiconductor lasers. / Chow, Weng W.; Koch, Stephan W; Sargent, Murray.

In: IEEE Journal of Quantum Electronics, Vol. 26, No. 6, 06.1990, p. 1052-1057.

Research output: Contribution to journalArticle

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