The Effects of Surface Capping during Annealing on the Microstructure of Ultrathin SIMOX Materials

Benedict Johnson, Yan Tan, Philip Anderson, Supapan Seraphin, Maria J. Anc

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effects of a protective capping layer on the microstructure of ultrathin separation by implantation of oxygen (SIMOX) materials formed by ion implantation were studied using transmission electron microscopy. A set of SIMOX wafers were implanted at 65 keV in a dose range of 1.5 to 7.0 × 1017 O+/cm2 followed by a high temperature (1350°C) annealing with and without a protective cap. The lowest dose to form a continuous buried oxide (BOX) layer without Si islands at 65 keV is 2.0 × 1017 O+/cm2 without a protective cap and 2.5 × 1017 O+/cm2 with a protective cap. Above 2.5 × 1017 O+/cm2 under both annealing conditions, the BOX layer formed continuously but with Si islands present. The uncapped samples show slightly lower density of Si islands. Oxygen from the annealing ambient can diffuse in the uncapped samples through the thin lop Si layer, which helps the BOX layer grow laterally and lower the Si island density. The density of defects in the lop Si layer is also slightly lower in the uncapped samples because of the ability of Si interstitials to incorporate into the surface and the effective annihilation of extended defects during the final annealing step. The top Si layers of the uncapped samples are thinner than those of the capped samples due to surface thermal oxidation.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume148
Issue number2
DOIs
StatePublished - 2001

Fingerprint

implantation
Annealing
Oxides
Oxygen
microstructure
Microstructure
annealing
oxygen
Ion implantation
caps
Defects
oxides
dosage
Transmission electron microscopy
defects
Oxidation
ion implantation
interstitials
wafers
transmission electron microscopy

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

The Effects of Surface Capping during Annealing on the Microstructure of Ultrathin SIMOX Materials. / Johnson, Benedict; Tan, Yan; Anderson, Philip; Seraphin, Supapan; Anc, Maria J.

In: Journal of the Electrochemical Society, Vol. 148, No. 2, 2001.

Research output: Contribution to journalArticle

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