The importance of gap states for energy level alignment at hybrid interfaces

D. A. Racke, L. L. Kelly, O. L.A. Monti

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS2 play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS2 and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.

Original languageEnglish (US)
Pages (from-to)132-139
Number of pages8
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume204
DOIs
StatePublished - Oct 1 2015

Keywords

  • Gap states
  • Hybrid interfaces
  • Photoelectron spectroscopy
  • van der Waals surfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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