The importance of gap states for energy level alignment at hybrid interfaces

D. A. Racke, L. L. Kelly, Oliver L A Monti Masel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS<inf>2</inf> play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS<inf>2</inf> and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.

Original languageEnglish (US)
Pages (from-to)132-139
Number of pages8
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume204
DOIs
StatePublished - Oct 1 2015

Fingerprint

Electron energy levels
energy levels
alignment
Semiconductor materials
Semiconducting organic compounds
Film growth
Electronic properties
Optoelectronic devices
Electronic structure
Energy gap
Physics
Metals
Copper
sheds
organic semiconductors
electronics
injection
electronic structure
copper
physics

Keywords

  • Gap states
  • Hybrid interfaces
  • Photoelectron spectroscopy
  • van der Waals surfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Radiation

Cite this

The importance of gap states for energy level alignment at hybrid interfaces. / Racke, D. A.; Kelly, L. L.; Monti Masel, Oliver L A.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 204, 01.10.2015, p. 132-139.

Research output: Contribution to journalArticle

@article{4bb4902133f04bd2841a48276160caca,
title = "The importance of gap states for energy level alignment at hybrid interfaces",
abstract = "Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS2 play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS2 and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.",
keywords = "Gap states, Hybrid interfaces, Photoelectron spectroscopy, van der Waals surfaces",
author = "Racke, {D. A.} and Kelly, {L. L.} and {Monti Masel}, {Oliver L A}",
year = "2015",
month = "10",
day = "1",
doi = "10.1016/j.elspec.2015.04.003",
language = "English (US)",
volume = "204",
pages = "132--139",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
issn = "0368-2048",
publisher = "Elsevier",

}

TY - JOUR

T1 - The importance of gap states for energy level alignment at hybrid interfaces

AU - Racke, D. A.

AU - Kelly, L. L.

AU - Monti Masel, Oliver L A

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS2 play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS2 and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.

AB - Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS2 play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS2 and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.

KW - Gap states

KW - Hybrid interfaces

KW - Photoelectron spectroscopy

KW - van der Waals surfaces

UR - http://www.scopus.com/inward/record.url?scp=84942499856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942499856&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2015.04.003

DO - 10.1016/j.elspec.2015.04.003

M3 - Article

VL - 204

SP - 132

EP - 139

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048

ER -