The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

S. Hughes, A. Knorr, S. W. Koch, R. Binder, R. Indik, J. V. Moloney

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.

Original languageEnglish (US)
Pages (from-to)555-559
Number of pages5
JournalSolid State Communications
Volume100
Issue number8
DOIs
StatePublished - Nov 1996

Keywords

  • A. semiconductors
  • B. carrier-carrier interaction
  • B. optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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