The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films

Bo Xie, Anthony J Muscat, Eric Busch, Todd Rhoad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The reaction of octyldimethylchlorosilane (ODMCS) dissolved in supercritical carbon dioxide (scCO 2) at 160-200 atm and 54-60°C with oxygen plasma ashed porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and electrical measurements. The FTIR results showed that ODMCS reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between ODMCS produced a physisorbed residue, which was partially removed by rinsing with pure scCO 2. XPS results showed no Cl was left on the surface after processing. The hydrophobicity of the oxygen plasma treated p-MSQ surface was recovered, and the dielectric constant of 2.4 for nonashed, blanket p-MSQ surface was restored. With increasing concentration of ODMCS from 32 to 156 ppm, the contact angle increased from 77° to 94°, yet the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.3-2.4. ODMCS dissolved in scCO 2 restored the dielectric constant and surface properties of mesoporous p-MSQ and is a candidate for pore sealing.

Original languageEnglish (US)
Title of host publicationAdvanced Metallization Conference (AMC)
EditorsD. Erb, P. Ramm, K. Masu, A. Osaki
Pages475-479
Number of pages5
StatePublished - 2004
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: Oct 19 2004Oct 21 2004

Other

OtherAdvanced Metallization Conference 2004, AMC 2004
CountryUnited States
CitySan Diego, CA
Period10/19/0410/21/04

Fingerprint

Carbon Monoxide
Thin films
Permittivity
Contact angle
X ray photoelectron spectroscopy
Oxygen
Plasmas
Hydrophobicity
Carbon Dioxide
Surface properties
Fourier transform infrared spectroscopy
Condensation
Carbon dioxide
Fourier transforms
Capacitors
Metals
Semiconductor materials
Infrared radiation
Processing

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Xie, B., Muscat, A. J., Busch, E., & Rhoad, T. (2004). The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films. In D. Erb, P. Ramm, K. Masu, & A. Osaki (Eds.), Advanced Metallization Conference (AMC) (pp. 475-479)

The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films. / Xie, Bo; Muscat, Anthony J; Busch, Eric; Rhoad, Todd.

Advanced Metallization Conference (AMC). ed. / D. Erb; P. Ramm; K. Masu; A. Osaki. 2004. p. 475-479.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xie, B, Muscat, AJ, Busch, E & Rhoad, T 2004, The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films. in D Erb, P Ramm, K Masu & A Osaki (eds), Advanced Metallization Conference (AMC). pp. 475-479, Advanced Metallization Conference 2004, AMC 2004, San Diego, CA, United States, 10/19/04.
Xie B, Muscat AJ, Busch E, Rhoad T. The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films. In Erb D, Ramm P, Masu K, Osaki A, editors, Advanced Metallization Conference (AMC). 2004. p. 475-479
Xie, Bo ; Muscat, Anthony J ; Busch, Eric ; Rhoad, Todd. / The reaction of octyldimethylchlorosilane and supercritical CO 2 mixtures with porous methylsilsesquioxane thin films. Advanced Metallization Conference (AMC). editor / D. Erb ; P. Ramm ; K. Masu ; A. Osaki. 2004. pp. 475-479
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