The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide

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Abstract

Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO2 (scCO2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO-H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl -O-Si-(CH3)3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56-2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.

Original languageEnglish (US)
Pages (from-to)434-440
Number of pages7
JournalMicroelectronic Engineering
Volume82
Issue number3-4 SPEC. ISS.
DOIs
StatePublished - Dec 1 2005

Keywords

  • Porous methylsilsesquioxane
  • Restoration
  • Supercritical carbon dioxide
  • TMBS
  • TMCS
  • TMIS
  • Trimethylhalosilanes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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