The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide

Research output: Contribution to journalArticle

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Abstract

Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO2 (scCO2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO-H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl -O-Si-(CH3)3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56-2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.

Original languageEnglish (US)
Pages (from-to)434-440
Number of pages7
JournalMicroelectronic Engineering
Volume82
Issue number3-4 SPEC. ISS.
DOIs
StatePublished - Dec 2005

Fingerprint

Carbon Dioxide
restoration
Restoration
carbon dioxide
Carbon dioxide
Spectroscopic ellipsometry
ellipsometry
Contact angle
X ray photoelectron spectroscopy
photoelectron spectroscopy
Fluids
fluids
Processing
Dimers
electrical measurement
Fourier transform infrared spectroscopy
Film thickness
Condensation
Fourier transforms
Repair

Keywords

  • Porous methylsilsesquioxane
  • Restoration
  • Supercritical carbon dioxide
  • TMBS
  • TMCS
  • TMIS
  • Trimethylhalosilanes

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide. / Xie, Bo; Muscat, Anthony J.

In: Microelectronic Engineering, Vol. 82, No. 3-4 SPEC. ISS., 12.2005, p. 434-440.

Research output: Contribution to journalArticle

@article{570c4de0ae424326af59c54a833c8581,
title = "The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide",
abstract = "Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO2 (scCO2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO-H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl -O-Si-(CH3)3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56-2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.",
keywords = "Porous methylsilsesquioxane, Restoration, Supercritical carbon dioxide, TMBS, TMCS, TMIS, Trimethylhalosilanes",
author = "Bo Xie and Muscat, {Anthony J}",
year = "2005",
month = "12",
doi = "10.1016/j.mee.2005.07.027",
language = "English (US)",
volume = "82",
pages = "434--440",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "3-4 SPEC. ISS.",

}

TY - JOUR

T1 - The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide

AU - Xie, Bo

AU - Muscat, Anthony J

PY - 2005/12

Y1 - 2005/12

N2 - Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO2 (scCO2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO-H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl -O-Si-(CH3)3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56-2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.

AB - Repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of trimethylhalosilanes (trimethylchlorosilane-TMCS, trimethylbromosilane-TMBS, and trimethyliodosilane-TMIS) dissolved in supercritical CO2 (scCO2) was studied using Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements. FTIR results showed that all trimethylhalosilanes reacted with silanol (SiO-H) groups in the fluid and on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films depositing trimethylsilyl -O-Si-(CH3)3 moieties. XPS results showed that no Br and I were detected after processing. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the series TMCS < TMBS < TMIS. These results indicate that the reactivity increased in the order TMCS < TMBS < TMIS, yet the dielectric constant was in the range of 2.56-2.60 within the limits of experimental error. One interpretation is that the increased thickness and contact angle were the result of self-condensation between trimethylsilanols in the fluid phase, which were formed by reaction of trimethylhalosilanes and water molecules. The dimers produced were strongly physisorbed to the p-MSQ film after processing.

KW - Porous methylsilsesquioxane

KW - Restoration

KW - Supercritical carbon dioxide

KW - TMBS

KW - TMCS

KW - TMIS

KW - Trimethylhalosilanes

UR - http://www.scopus.com/inward/record.url?scp=28044446769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28044446769&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.07.027

DO - 10.1016/j.mee.2005.07.027

M3 - Article

AN - SCOPUS:28044446769

VL - 82

SP - 434

EP - 440

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 3-4 SPEC. ISS.

ER -