Theoretical analysis of higher-order phonon sidebands in semiconductor luminescence spectra

T. Feldtmann, M. Kira, S. W. Koch

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A semiconductor luminescence formula is derived that includes phonon replica of arbitrary order based on a non-perturbative treatment of the electron-phonon interaction. The formula is used to analyze the extraordinarily strong sidebands observed with ZnO nanorods in recent experiments. Sidebands due to free and impurity-bound excitons are compared, and the generic differences between bulk and quantum-well emission are discussed.

Original languageEnglish (US)
Pages (from-to)107-113
Number of pages7
JournalJournal of Luminescence
Volume130
Issue number1
DOIs
StatePublished - Jan 1 2010

Keywords

  • Phonon sidebands
  • Polaron picture
  • Semiconductor luminescence

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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