Theoretical and experimental investigation of ILD removal rates, coefficient of friction, and pad flattening ratio

L. Borucki, H. Lee, Y. Zhuang, A. Philipossian

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

The interlayer dielectric (ILD) removal rates, coefficients of friction, and pad flattening ratio of silicon dioxide films were analyzed. Pad and wafer were rotated in the same direction at the same rate at a relative sliding speed of 0.62 m/sec, the pressure applied to the wafer was 20.7 kPa, and polishing timers were 2 min. When no conditioning was applied, the removal rate declined continuously to a very low level in the classical manner of polish rate decay. It was found that the secondary peak grew more quickly if irregular fumed slurry particles were used rather than spherical colloidal particles under otherwise identical loading conditions.

Original languageEnglish (US)
Pages9741-9748
Number of pages8
StatePublished - Dec 1 2004
Event2004 AIChE Annual Meeting - Austin, TX, United States
Duration: Nov 7 2004Nov 12 2004

Other

Other2004 AIChE Annual Meeting
CountryUnited States
CityAustin, TX
Period11/7/0411/12/04

ASJC Scopus subject areas

  • Engineering(all)

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    Borucki, L., Lee, H., Zhuang, Y., & Philipossian, A. (2004). Theoretical and experimental investigation of ILD removal rates, coefficient of friction, and pad flattening ratio. 9741-9748. Paper presented at 2004 AIChE Annual Meeting, Austin, TX, United States.