Theoretical and Experimental Results on Coulomb Effects in Semiconductor Quantum Dots

Y. Z. Hu, Stephan W Koch, M. Lindberg, Nasser N Peyghambarian

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Recent theoretical and experimental studies of semiconductor quantum dots are summarized. The one and two electron hole‐pair states are investigated and the effects of quantum confinement and Coulomb interaction are discussed. Besides intrinsic quantum dots, also the effects of trapped carriers and surface polarizations are analyzed. The nonlinear properties are studied by computing the pump‐induced absorption changes (differential transmission spectra). Good agreement with nanosecond and femtosecond hole‐burning experiments is found.

Original languageEnglish (US)
Pages (from-to)249-257
Number of pages9
Journalphysica status solidi (b)
Volume159
Issue number1
DOIs
StatePublished - 1990

Fingerprint

Semiconductor quantum dots
quantum dots
Quantum confinement
electron states
Coulomb interactions
Electron energy levels
Polarization
polarization
Experiments
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Theoretical and Experimental Results on Coulomb Effects in Semiconductor Quantum Dots. / Hu, Y. Z.; Koch, Stephan W; Lindberg, M.; Peyghambarian, Nasser N.

In: physica status solidi (b), Vol. 159, No. 1, 1990, p. 249-257.

Research output: Contribution to journalArticle

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