Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage

H. E. Schmidt; H. Haug; S. W. Koch

doi:10.1063/1.94886

Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage

H. E. Schmidt, H. Haug, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.

Original language	English (US)
Pages (from-to)	787-789
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	8
DOIs	https://doi.org/10.1063/1.94886
State	Published - Dec 1 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{82c4a23eabf94dce99001417b6f0e389,

title = "Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage",

abstract = "The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.",

author = "Schmidt, {H. E.} and H. Haug and Koch, {S. W.}",

year = "1984",

month = dec,

day = "1",

doi = "10.1063/1.94886",

language = "English (US)",

volume = "44",

pages = "787--789",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage

AU - Schmidt, H. E.

AU - Haug, H.

AU - Koch, S. W.

PY - 1984/12/1

Y1 - 1984/12/1

N2 - The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.

AB - The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=0021411035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021411035&partnerID=8YFLogxK

U2 - 10.1063/1.94886

DO - 10.1063/1.94886

M3 - Article

AN - SCOPUS:0021411035

VL - 44

SP - 787

EP - 789

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -