Abstract
The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 787-789 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 44 |
| Issue number | 8 |
| DOIs | |
| State | Published - Dec 1 1984 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Schmidt, H. E., Haug, H., & Koch, S. W. (1984). Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage. Applied Physics Letters, 44(8), 787-789. https://doi.org/10.1063/1.94886