THEORETICAL EXPLANATION OF THE ABSORPTIVE OPTICAL BISTABILITY IN SEMICONDUCTORS DUE TO BAND-GAP SHRINKAGE.

H. E. Schmidt, H. Haug, Stephan W Koch

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Abstract

The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.

Original languageEnglish (US)
Pages (from-to)787-789
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number8
DOIs
Publication statusPublished - Jan 1 1984
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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