THEORETICAL EXPLANATION OF THE ABSORPTIVE OPTICAL BISTABILITY IN SEMICONDUCTORS DUE TO BAND-GAP SHRINKAGE.

H. E. Schmidt; H. Haug; Stephan W Koch

doi:10.1063/1.94886

THEORETICAL EXPLANATION OF THE ABSORPTIVE OPTICAL BISTABILITY IN SEMICONDUCTORS DUE TO BAND-GAP SHRINKAGE.

H. E. Schmidt, H. Haug, Stephan W Koch

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49 Scopus citations

Abstract

The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.

Original language	English (US)
Pages (from-to)	787-789
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	8
DOIs	https://doi.org/10.1063/1.94886
Publication status	Published - Jan 1 1984
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Schmidt, H. E., Haug, H., & Koch, S. W. (1984). THEORETICAL EXPLANATION OF THE ABSORPTIVE OPTICAL BISTABILITY IN SEMICONDUCTORS DUE TO BAND-GAP SHRINKAGE. Applied Physics Letters, 44(8), 787-789. https://doi.org/10.1063/1.94886

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10.1063/1.94886