Theory of a semiconductor laser.

Murray Sargent, Stephan W Koch, Weng W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsNasser Peygambarian
PublisherPubl by Int Soc for Optical Engineering
Pages130-138
Number of pages9
Volume1216
ISBN (Print)0819402575
StatePublished - 1990
EventNonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA
Duration: Jan 16 1990Jan 17 1990

Other

OtherNonlinear Optical Materials and Devices for Photonic Switching
CityLos Angeles, CA, USA
Period1/16/901/17/90

Fingerprint

Semiconductor lasers
semiconductor lasers
beat frequencies
saturation
Scattering
Lasers
Four wave mixing
Laser modes
phase conjugation
hole burning
Mirrors
Energy gap
coupling coefficients
conjugation
scattering
Boundary conditions
Spectroscopy
Semiconductor materials
lasers
boundary conditions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sargent, M., Koch, S. W., & Chow, W. W. (1990). Theory of a semiconductor laser. In N. Peygambarian (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1216, pp. 130-138). Publ by Int Soc for Optical Engineering.

Theory of a semiconductor laser. / Sargent, Murray; Koch, Stephan W; Chow, Weng W.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. p. 130-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sargent, M, Koch, SW & Chow, WW 1990, Theory of a semiconductor laser. in N Peygambarian (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1216, Publ by Int Soc for Optical Engineering, pp. 130-138, Nonlinear Optical Materials and Devices for Photonic Switching, Los Angeles, CA, USA, 1/16/90.
Sargent M, Koch SW, Chow WW. Theory of a semiconductor laser. In Peygambarian N, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1216. Publ by Int Soc for Optical Engineering. 1990. p. 130-138
Sargent, Murray ; Koch, Stephan W ; Chow, Weng W. / Theory of a semiconductor laser. Proceedings of SPIE - The International Society for Optical Engineering. editor / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. pp. 130-138
@inproceedings{dc1a988280004683a8134ffbd8e4c6e1,
title = "Theory of a semiconductor laser.",
abstract = "This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.",
author = "Murray Sargent and Koch, {Stephan W} and Chow, {Weng W.}",
year = "1990",
language = "English (US)",
isbn = "0819402575",
volume = "1216",
pages = "130--138",
editor = "Nasser Peygambarian",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",

}

TY - GEN

T1 - Theory of a semiconductor laser.

AU - Sargent, Murray

AU - Koch, Stephan W

AU - Chow, Weng W.

PY - 1990

Y1 - 1990

N2 - This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.

AB - This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.

UR - http://www.scopus.com/inward/record.url?scp=0025659852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025659852&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025659852

SN - 0819402575

VL - 1216

SP - 130

EP - 138

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Peygambarian, Nasser

PB - Publ by Int Soc for Optical Engineering

ER -