Abstract
This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Nasser Peygambarian |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 130-138 |
| Number of pages | 9 |
| Volume | 1216 |
| ISBN (Print) | 0819402575 |
| State | Published - 1990 |
| Event | Nonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA Duration: Jan 16 1990 → Jan 17 1990 |
Other
| Other | Nonlinear Optical Materials and Devices for Photonic Switching |
|---|---|
| City | Los Angeles, CA, USA |
| Period | 1/16/90 → 1/17/90 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Theory of a semiconductor laser. / Sargent, Murray; Koch, Stephan W; Chow, Weng W.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. p. 130-138.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Theory of a semiconductor laser.
AU - Sargent, Murray
AU - Koch, Stephan W
AU - Chow, Weng W.
PY - 1990
Y1 - 1990
N2 - This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.
AB - This paper summarizes a simple single-mode theory of a semiconductor laser and two kinds of multimode extensions. The theories are based on an quasi-equilibrium Fermi-Dirac model of a two-band semiconductor laser gain medium. We include cavity boundary conditions and find the laser single-mode steady-state oscillation intensity. The question as to when sidemodes can build up leads to consideration of a theory of multiwave mixing in the semiconductor medium. This theory is also useful in saturation spectroscopy and phase conjugation using such media, but it does not predict the saturation behavior of the sidemodes. We mention a third-order multimode theory of the laser that allows for sidemode saturation and includes the many-body effects of band-gap renormalization and Coulomb enhancement. These multimode theories assume that the intermode beat frequencies are small compared to the carrier-carrier scattering rate, an assumption that should be valid for external-mirror semiconductor lasers. Using a simple model for the beat frequencies comparable to the carrier-carrier scattering rate, we find two-level inhomogeously broadened sidemode gain and coupling coefficients. Population pulsations and spectral hole burning play approximately equal roles in this theory.
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M3 - Conference contribution
AN - SCOPUS:0025659852
SN - 0819402575
VL - 1216
SP - 130
EP - 138
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Peygambarian, Nasser
PB - Publ by Int Soc for Optical Engineering
ER -