Theory of absorptive bistability

Stephan W Koch, H. E. Schmidt, H. Haug

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A model for a resonatorless absorptive optical bistability in laser-excited semiconductors is presented. The intensity-dependent absorption coefficient is calculated microscopically taking into account band-gap renormalization and band filling due to formation of an electron-hole plasma. The spatial and temporal variations of the carrier density and the light intensity in the crystal are calculated from solutions of their coupled transport equations. An intrinsically bistable propagation mechanism for a density kink is found, which gives rise to additional structures in the bistable hysteresis loop. The influence of different carrier diffusion coefficients on the results is calculated.

Original languageEnglish (US)
Pages (from-to)235-242
Number of pages8
JournalJournal of Luminescence
Volume30
Issue number1-4
DOIs
StatePublished - 1985
Externally publishedYes

Fingerprint

Optical bistability
Semiconductor Lasers
Hysteresis loops
Carrier concentration
Energy gap
Electrons
Semiconductor materials
Plasmas
Light
Crystals
optical bistability
Lasers
luminous intensity
absorptivity
diffusion coefficient
hysteresis
propagation
crystals
lasers

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Theory of absorptive bistability. / Koch, Stephan W; Schmidt, H. E.; Haug, H.

In: Journal of Luminescence, Vol. 30, No. 1-4, 1985, p. 235-242.

Research output: Contribution to journalArticle

Koch, Stephan W ; Schmidt, H. E. ; Haug, H. / Theory of absorptive bistability. In: Journal of Luminescence. 1985 ; Vol. 30, No. 1-4. pp. 235-242.
@article{94e5379419fc4a019a3d6049fd67de13,
title = "Theory of absorptive bistability",
abstract = "A model for a resonatorless absorptive optical bistability in laser-excited semiconductors is presented. The intensity-dependent absorption coefficient is calculated microscopically taking into account band-gap renormalization and band filling due to formation of an electron-hole plasma. The spatial and temporal variations of the carrier density and the light intensity in the crystal are calculated from solutions of their coupled transport equations. An intrinsically bistable propagation mechanism for a density kink is found, which gives rise to additional structures in the bistable hysteresis loop. The influence of different carrier diffusion coefficients on the results is calculated.",
author = "Koch, {Stephan W} and Schmidt, {H. E.} and H. Haug",
year = "1985",
doi = "10.1016/0022-2313(85)90055-9",
language = "English (US)",
volume = "30",
pages = "235--242",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Theory of absorptive bistability

AU - Koch, Stephan W

AU - Schmidt, H. E.

AU - Haug, H.

PY - 1985

Y1 - 1985

N2 - A model for a resonatorless absorptive optical bistability in laser-excited semiconductors is presented. The intensity-dependent absorption coefficient is calculated microscopically taking into account band-gap renormalization and band filling due to formation of an electron-hole plasma. The spatial and temporal variations of the carrier density and the light intensity in the crystal are calculated from solutions of their coupled transport equations. An intrinsically bistable propagation mechanism for a density kink is found, which gives rise to additional structures in the bistable hysteresis loop. The influence of different carrier diffusion coefficients on the results is calculated.

AB - A model for a resonatorless absorptive optical bistability in laser-excited semiconductors is presented. The intensity-dependent absorption coefficient is calculated microscopically taking into account band-gap renormalization and band filling due to formation of an electron-hole plasma. The spatial and temporal variations of the carrier density and the light intensity in the crystal are calculated from solutions of their coupled transport equations. An intrinsically bistable propagation mechanism for a density kink is found, which gives rise to additional structures in the bistable hysteresis loop. The influence of different carrier diffusion coefficients on the results is calculated.

UR - http://www.scopus.com/inward/record.url?scp=46549098463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46549098463&partnerID=8YFLogxK

U2 - 10.1016/0022-2313(85)90055-9

DO - 10.1016/0022-2313(85)90055-9

M3 - Article

AN - SCOPUS:46549098463

VL - 30

SP - 235

EP - 242

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

IS - 1-4

ER -